公开(公告)号：KR101438545B1

公开(公告)日：2014-09-16

申请号：KR1020130032761

申请日：2013-03-27

Applicant: 고려대학교 산학협력단

Inventor： 이치우 ,  오미경 ,  양점식 ,  채수병 ,  이상민

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01B1/026 ,  B32B15/01 ,  C22C9/00 ,  C22C27/04 ,  H01L31/0322 ,  H01L31/03928 ,  Y02E10/541 ,  Y10T428/12826

Abstract: The present invention relates to a method for manufacturing a copper thin film on a Mo/SUS flexible substrate and, more particularly, to a method for uniformly manufacturing a copper thin film on aMo /SUS flexible substrate for a short time by applying a current. According to the present invention, a copper thin film layer becomes thicker according as the concentration of a copper precursor solution increases or current density increases. The copper precursor is selected from the group consisting of copper sulfate, copper chloride, and copper cyanide.

Abstract translation: 本发明涉及一种在Mo / SUS柔性基板上制造铜薄膜的方法，更具体地说，涉及通过施加电流在短时间内在M / SUS柔性基板上均匀地制造铜薄膜的方法。 根据本发明，随着铜前体溶液的浓度增加或电流密度增加，铜薄膜层变厚。 铜前体选自硫酸铜，氯化铜和氰化铜。