탄소나노튜브 전계 방출원의 제조 방법
    1.
    发明公开
    탄소나노튜브 전계 방출원의 제조 방법 有权
    通过使用碳纳米管制造电子发射器件的方法

    公开(公告)号:KR1020130094059A

    公开(公告)日:2013-08-23

    申请号:KR1020120015408

    申请日:2012-02-15

    Abstract: PURPOSE: A method for manufacturing a carbon nanotube electric field source is provided to improve connectivity between a circuit board and a carbon nanotube by directly connecting the circuit board to the carbon nanotube. CONSTITUTION: Solution generated by mixing a carbon nanotube, a nanoparticle, and a solvent is coated on a conductive filtration circuit board (S410). The solvent is discharged through a groove formed on the conductive filtration circuit board (S420). A thermal process is executed on the conductive filtration circuit board. The nanoparticle is sintered (S430). The nanoparticle includes a metal nanoparticle or a metal oxide nanoparticle. [Reference numerals] (S410) Apply a mixed solvent to conductive filter film substrate; (S420) Filter the solvent; (S430) Sinister nanoparticles

    Abstract translation: 目的:提供一种用于制造碳纳米管电场源的方法,以通过将电路板直接连接到碳纳米管来改善电路板和碳纳米管之间的连接性。 构成:将通过混合碳纳米管,纳米颗粒和溶剂产生的溶液涂覆在导电性过滤电路板上(S410)。 溶剂通过形成在导电性过滤电路板上的槽排出(S420)。 在导电性过滤电路板上进行热处理。 将纳米颗粒烧结(S430)。 纳米颗粒包括金属纳米颗粒或金属氧化物纳米颗粒。 (参考号)(S410)将混合溶剂涂布在导电性过滤膜基材上; (S420)过滤溶剂; (S430)阴极纳米粒子

    CNT 전계 전자 방출원 및 그 제조 방법
    2.
    发明公开
    CNT 전계 전자 방출원 및 그 제조 방법 有权
    CNT场发射体及其制造方法

    公开(公告)号:KR1020120091780A

    公开(公告)日:2012-08-20

    申请号:KR1020110011766

    申请日:2011-02-10

    Abstract: PURPOSE: A CNT(Carbon Nano-Tube) field emission electron source and a manufacturing method thereof are provided to reinforce adhesive force by forming a patterned CNT film on an electrode substrate. CONSTITUTION: A CNT film(130) is formed on a conductive substrate(110) according to an electrophoresis method. The CNT film is patterned as a predetermined shape on a photo-resist layer laminated on the conductive substrate. The CNT film is combined with a domain of the conductive substrate which is exposed according to patterning. The photo-resist layer is eliminated. A plating layer(140) is formed on a domain in which the photo-resist layer is eliminated according to an electroless plating reaction. The plating layer supports the combination of the CNT film and the conductive substrate.

    Abstract translation: 目的:提供CNT(碳纳米管)场发射电子源及其制造方法,以通过在电极基板上形成图案化的CNT膜来增强粘附力。 构成:根据电泳方法在导电性基板(110)上形成CNT膜(130)。 在层叠在导电性基板上的光致抗蚀剂层上将CNT膜图案化为规定的形状。 CNT膜与根据图案化而暴露的导电基底的结构域结合。 消除光刻胶层。 根据化学镀反应在除去光致抗蚀剂层的区域上形成镀层(140)。 电镀层支持CNT膜和导电基底的组合。

    CNT 전계 전자 방출원 및 그 제조 방법
    3.
    发明授权
    CNT 전계 전자 방출원 및 그 제조 방법 有权
    CNT场发射体及其制造方法

    公开(公告)号:KR101231598B1

    公开(公告)日:2013-02-08

    申请号:KR1020110011766

    申请日:2011-02-10

    Abstract: CNT(Carbon nanotube) 전계 전자 방출원의 제조 방법은, (a) 전도성 기판상에 포토레지스트층을 적층시키는 단계, (b) 상기 포토레지스트층에 미리 설정된 형상의 패터닝을 수행하여, 상기 전도성 기판의 일부를 노출시키는 단계, (c) 상기 전도성 기판의 노출된 영역에 전기영동방법에 따라 CNT 막을 형성시키는 단계, (d) 상기 전도성 기판상의 상기 포토레지스트층을 제거하는 단계 및 (e) 상기 포토레지스트층이 제거된 영역에 도금층을 형성하는 단계를 포함한다.

    탄소나노튜브 전계 방출원의 제조 방법
    4.
    发明授权
    탄소나노튜브 전계 방출원의 제조 방법 有权
    通过使用碳纳米管制造电子发射器件的方法

    公开(公告)号:KR101323306B1

    公开(公告)日:2013-10-29

    申请号:KR1020120015408

    申请日:2012-02-15

    Abstract: 탄소나노튜브 전계방출원 제조 방법은, (a) 전도성 여과막 기판에 탄소나노튜브, 나노입자 및 용매가 혼합된 용액을 도포하는 단계; (b) 상기 용매를 상기 전도성 여과막 기판에 형성된 구멍을 통해 배출시키는 단계; 및(c) 상기 (b) 단계를 수행한 전도성 여과막 기판에 열처리를 수행하여, 상기 나노입자를 소결시키는 단계를 포함하는 한다.

    탄소나노튜브 전계방출원의 제조 방법
    5.
    发明授权
    탄소나노튜브 전계방출원의 제조 방법 有权
    通过使用碳纳米管制造电子发射器件的方法

    公开(公告)号:KR101282122B1

    公开(公告)日:2013-07-04

    申请号:KR1020120015498

    申请日:2012-02-15

    Abstract: PURPOSE: A manufacturing method of a carbon nano tube field emission source is provided to strengthen the adhesion between a carbon nano tube thin film and a cathode substrate by using a silver paste and aligning the carbon nano tube thin film and the substrate vertically. CONSTITUTION: A hole-patterned substrate is placed on a hot plate (S1100). A carbon nano tube thin film is formed on the hole-patterned substrate (S1200). A metal foil is attached on the carbon nano tube film after the hot plate is removed (S1300). The carbon nano tube thin film to which the formed metal foil is attached gets flip-flopped so that the metal foil is placed at the bottom of the thin film (S1400). The surface of the hole-patterned substrate is treated with a viscous material (S1500). The surface of the carbon nano tube thin film gets activated as the viscous material is attached to and detached from it (S1600). [Reference numerals] (S1100) Place a substrate on a hot plate; (S1200) A carbon nano tube thin film is formed; (S1300) Remove the hot plate and attach a metal foil; (S1400) Flip-flop the carbon nano tube thin film; (S1500) Treat the surface of the carbon nano tube thin film; (S1600) Activate the surface of the carbon nano tube thin film by attaching and detaching a viscous material

    Abstract translation: 目的:提供碳纳米管场发射源的制造方法,通过使用银膏将碳纳米管薄膜和阴极基板的粘合强化,并使碳纳米管薄膜和基板垂直取向。 构成:将孔图案化基板放置在热板上(S1100)。 在孔图案化基板上形成碳纳米管薄膜(S1200)。 去除热板后,在碳纳米管膜上附着金属箔(S1300)。 将形成有金属箔的碳纳米管薄膜翻转,使金属箔放置在薄膜的底部(S1400)。 用粘性材料处理孔图案化衬底的表面(S1500)。 碳纳米管薄膜的表面随着粘性物质的附着和分离而被激活(S1600)。 (参考号)(S1100)将基板置于热板上; (S1200)形成碳纳米管薄膜; (S1300)拆下热板并安装金属箔; (S1400)触发碳纳米管薄膜; (S1500)处理碳纳米管薄膜的表面; (S1600)通过安装和分离粘性物质来活化碳纳米管薄膜的表面

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