公开(公告)号：KR1020090070988A

公开(公告)日：2009-07-01

申请号：KR1020070139169

申请日：2007-12-27

Applicant: 고려대학교 산학협력단

Inventor： 남산 ,  최창학 ,  최주영

IPC: C04B35/46 ,  C04B35/475

CPC classification number: H01L21/02172 ,  H01L21/02266 ,  H01L27/108

Abstract: An MIM capacitor employing dielectric thin films is provided to be deposited within a low temperature range from room temperature to 300°C and to show high dielectric constant and low dielectric loss. An MIM capacitor(10) comprises: a bottom electrode layer(120); a dielectric thin film(150) comprising dielectric compositions represented by the formula 1 of Bi6Ti5TeO22; and a top electrode layer(170) patterned so as to overlap with the bottom electrode layer. The dielectric thin film is formed on the bottom electrode layer in 50-300nm thickness. The top electrode layer is formed on the dielectric thin film. The MIM capacitor shows high dielectric constant of 50 or greater and low dielectric loss of 1% or less.

Abstract translation: 提供使用电介质薄膜的MIM电容器，其在从室温至300℃的低温范围内沉积并显示高介电常数和低介电损耗。 MIM电容器（10）包括：底部电极层（120）; 包含由Bi6Ti5TeO22的式1表示的电介质组合物的电介质薄膜（150） 以及图案化以与底部电极层重叠的顶部电极层（170）。 电介质薄膜形成在厚度为50-300nm的底部电极层上。 顶电极层形成在电介质薄膜上。 MIM电容器具有50或更大的高介电常数和1％以下的低介电损耗。