公开(公告)号：KR100462395B1

公开(公告)日：2004-12-17

申请号：KR1020010084249

申请日：2001-12-24

Applicant: 광주과학기술원

Inventor： 송종인 ,  강신재 ,  조성준 ,  한재천 ,  박성웅

IPC: H01L29/78

Abstract: PURPOSE: An epitaxial structure for InP based MOSFET(Metal Oxide Semiconductor Field Effect Transistor) and a method for manufacturing an MOSFET using the same are provided to be capable of obtaining stable and uniform device characteristics by carrying out a liquid phase oxidation step and an oxygen plasma processing step. CONSTITUTION: An epitaxial structure is provided with a semi-insulating InP substrate(10), an InAlAs or InP buffer layer(11) formed on the substrate, an InGaAs channel layer(12) formed on the buffer layer, an InP anti-oxidizing layer(13) formed on the channel layer, and a high concentration N-type InGaAs ohmic/oxide layer(14) formed on the anti-oxidizing layer. At this time, the InGaAs oxide layer is formed by using the following two-step process. The Ga and As of an InGaAs layer are oxidized by using an acidity controlled liquid phase oxidation solution. The In of the InGaAs layer is then oxidized by using an oxygen plasma process.

Abstract translation: 目的：提供用于InP基MOSFET（金属氧化物半导体场效应晶体管）的外延结构和使用该结构的MOSFET的制造方法，以通过进行液相氧化步骤和氧气能够获得稳定和均匀的器件特性 等离子处理步骤。 本发明提供一种外延结构，其具有半绝缘InP衬底（10），在衬底上形成的InAlAs或InP缓冲层（11），在缓冲层上形成的InGaAs沟道层（12），InP抗氧化 形成在沟道层上的层（13）以及形成在抗氧化层上的高浓度N型InGaAs欧姆/氧化物层（14）。 此时，通过使用以下两步工艺形成InGaAs氧化物层。 通过使用酸度控制的液相氧化溶液来氧化InGaAs层的Ga和As。 然后通过使用氧等离子体工艺来氧化InGaAs层的In。

公开(公告)号：KR1020030054133A

公开(公告)日：2003-07-02

申请号：KR1020010084249

申请日：2001-12-24

Applicant: 광주과학기술원

Inventor： 송종인 ,  강신재 ,  조성준 ,  한재천 ,  박성웅

IPC: H01L29/78

Abstract: PURPOSE: An epitaxial structure for InP based MOSFET(Metal Oxide Semiconductor Field Effect Transistor) and a method for manufacturing an MOSFET using the same are provided to be capable of obtaining stable and uniform device characteristics by carrying out a liquid phase oxidation step and an oxygen plasma processing step. CONSTITUTION: An epitaxial structure is provided with a semi-insulating InP substrate(10), an InAlAs or InP buffer layer(11) formed on the substrate, an InGaAs channel layer(12) formed on the buffer layer, an InP anti-oxidizing layer(13) formed on the channel layer, and a high concentration N-type InGaAs ohmic/oxide layer(14) formed on the anti-oxidizing layer. At this time, the InGaAs oxide layer is formed by using the following two-step process. The Ga and As of an InGaAs layer are oxidized by using an acidity controlled liquid phase oxidation solution. The In of the InGaAs layer is then oxidized by using an oxygen plasma process.

Abstract translation: 目的：提供用于基于InP的MOSFET（金属氧化物半导体场效应晶体管）的外延结构和使用其的制造MOSFET的方法，以通过进行液相氧化步骤和氧气来获得稳定而均匀的器件特性 等离子体处理步骤。 构造：外延结构设置有半绝缘InP衬底（10），形成在衬底上的InAlAs或InP缓冲层（11），形成在缓冲层上的InGaAs沟道层（12），InP抗氧化 形成在沟道层上的层（13）和形成在抗氧化层上的高浓度N型InGaAs欧姆/氧化物层（14）。 此时，通过使用以下两步法形成InGaAs氧化物层。 通过使用酸度控制液相氧化溶液氧化InGaAs层的Ga和As。 然后通过使用氧等离子体工艺将InGaAs层的In氧化。

公开(公告)号：KR1020030054131A

公开(公告)日：2003-07-02

申请号：KR1020010084246

申请日：2001-12-24

Applicant: 광주과학기술원

Inventor： 송종인 ,  강신재

IPC: H01L21/208

Abstract: PURPOSE: A method for forming an InGaAs oxide layer having improved dielectric property is provided to be capable of oxidizing the In of an InGaAs layer by using an oxygen plasma process. CONSTITUTION: The Ga and As of an InGaAs layer are oxidized by using an acidity controlled liquid phase oxidation solution. At this time, the liquid phase oxidation solution is incapable of oxidizing the In of the InGaAs layer. The In of the InGaAs layer is then oxidized by using an oxygen plasma process. At this time, the InGaAs layer is completely transformed into InGaAs oxide layer. Preferably, the liquid phase oxidation solution is capable of obtaining by dissolving the Ga or In in nitric acid. Preferably, the acidity is at the range of about 4-5 pH.

Abstract translation: 目的：提供一种形成具有改善介电性能的InGaAs氧化物层的方法，以能够通过使用氧等离子体处理来氧化InGaAs层中的In。 构成：通过使用酸度控制液相氧化溶液氧化InGaAs层的Ga和As。 此时，液相氧化溶液不能氧化InGaAs层的In。 然后通过使用氧等离子体工艺将InGaAs层的In氧化。 此时，InGaAs层完全转变成InGaAs氧化物层。 优选地，液相氧化溶液能够通过将Ga或In溶解在硝酸中来获得。 优选地，酸度在约4-5pH的范围内。

公开(公告)号：KR100454230B1

公开(公告)日：2004-10-26

申请号：KR1020010084246

申请日：2001-12-24

Applicant: 광주과학기술원

Inventor： 송종인 ,  강신재

IPC: H01L21/208

Abstract: PURPOSE: A method for forming an InGaAs oxide layer having improved dielectric property is provided to be capable of oxidizing the In of an InGaAs layer by using an oxygen plasma process. CONSTITUTION: The Ga and As of an InGaAs layer are oxidized by using an acidity controlled liquid phase oxidation solution. At this time, the liquid phase oxidation solution is incapable of oxidizing the In of the InGaAs layer. The In of the InGaAs layer is then oxidized by using an oxygen plasma process. At this time, the InGaAs layer is completely transformed into InGaAs oxide layer. Preferably, the liquid phase oxidation solution is capable of obtaining by dissolving the Ga or In in nitric acid. Preferably, the acidity is at the range of about 4-5 pH.

Abstract translation: 目的：提供一种用于形成具有改善的介电性能的InGaAs氧化物层的方法，以便能够通过使用氧等离子体工艺来氧化InGaAs层的In。 构成：使用酸度控制的液相氧化溶液氧化InGaAs层的Ga和As。 此时，液相氧化溶液不能氧化InGaAs层的In。 然后通过使用氧等离子体工艺来氧化InGaAs层的In。 此时，InGaAs层完全转变为InGaAs氧化物层。 优选地，液相氧化溶液能够通过将镓或铟溶解在硝酸中而获得。 优选地，酸度在约4-5pH的范围内。