인산 및 붕화규소(SiB₄)를 이용하는, 산화저항성이 개선된 탄소재의 제조방법
    1.
    发明授权
    인산 및 붕화규소(SiB₄)를 이용하는, 산화저항성이 개선된 탄소재의 제조방법 失效
    使用H 3 PO 4和SIB 4的碳基质的方法

    公开(公告)号:KR1019960001004B1

    公开(公告)日:1996-01-17

    申请号:KR1019930006809

    申请日:1993-04-22

    Abstract: The oxidation-resistant carbon material is prepared by (A) adding 1-6wt% silicon boride (SiB4) to base carbon material like graphite, carbon-carbon composite or carbon-reinforced plastics to produce carbon material; (B) placing silicon boride-containing carbon material in 75-100% phosphoric acid solution and heating at 100-400 deg.C for 1-5 hrs; and (C) drying the product at 100-500 deg.C under vacuum. The method is more effective and economical than the conventional method using oxidation inhibitors such as boron and silicon to improve oxidation resistance of carbon material.

    Abstract translation: 通过(A)向基础碳材料如石墨,碳 - 碳复合材料或碳强化塑料中加入1-6重量%的硼化硅(SiB4)制备碳材料,制备抗氧化碳材料; (B)将含硼化硼的碳材料放置在75-100%的磷酸溶液中,并在100-400℃加热1-5小时; 和(C)在100-500℃真空干燥产物。 该方法比使用诸如硼和硅的氧化抑制剂的常规方法更有效和经济以改善碳材料的抗氧化性。

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