公开(公告)号：KR1020020066547A

公开(公告)日：2002-08-19

申请号：KR1020010006790

申请日：2001-02-12

Applicant: 국방과학연구소

Inventor： 김연철 ,  원용구 ,  이형식 ,  임광현 ,  신동혁

IPC: C04B35/56 ,  C04B41/52 ,  B32B18/00

CPC classification number: C04B41/52 ,  C04B35/573 ,  C04B35/806 ,  C04B41/5059 ,  C04B2235/428 ,  C04B2235/48 ,  C04B2235/5256 ,  C04B2235/60 ,  C04B2235/616 ,  C04B2235/77 ,  C04B41/4529 ,  C04B41/4556 ,  C04B41/4539 ,  C04B41/5064

Abstract: PURPOSE: A production method of C/SiC composite materials comprising carbon fibers is provided to decrease manufacturing time and costs greatly by one-shot process including carbonization, thermal treatment, impregnation and formation of oxidation resistant layer unlike conventional chemical vapor infiltration process. CONSTITUTION: The C/SiC composite materials with good heat resistance for missile nozzles, supersonic flight engines, high temperature valves, etc. are produced by the following steps of: (i) layering carbon/phenolic preforms and hardening, wherein the preform is one of various preforms prepared by press molding, filament winding, sewing, and involute method; (ii) carbonizing phenolic resin, and heating to 2300deg.C or lower; (iii) impregnating with liquid metal silicon and sintering between 1400 and 1800deg.C, and optionally coating the sintered sample with BN mixture comprising 70-80% of BN, 10-20% of acetone, and 0-10% of water; (iv) heating to 2000-2700deg.C to form an oxidation resistant layer on the surface of preform caused by vaporization of Si-contained compound. Also, the C/SiC composite materials are produced by performing carbonization, thermal treatment and super-high temperature thermal treatment at the same time, and excluding step (iv). The hardened sample from step (i) is processed by making holes with 0.5-1.5mm diameter at 5-20mm intervals, where the holes are used to discharge decomposed gas from the step (ii).

Abstract translation: 目的：提供一种包含碳纤维的C / SiC复合材料的生产方法，通过与常规化学气相渗透方法不同的碳化，热处理，浸渍和抗氧化层的形成，通过一步法大大减少制造时间和成本。 构成：通过以下步骤制备导弹喷嘴，超音速飞行发动机，高温阀等具有良好耐热性的C / SiC复合材料：（i）分层碳/酚醛预成型件和硬化，其中预制件为一 通过压模，丝缠绕，缝合和渐开线方法制备的各种预成型件; （ii）碳化酚醛树脂，加热至2300℃以下; （iii）用液态金属硅浸渍并烧结在1400至1800℃之间，并且任选地用包含70-80％BN，10-20％丙酮和0-10％水的BN混合物涂覆烧结样品; （iv）加热至2000-2700℃，以由含Si化合物蒸发而在预成型体表面形成抗氧化层。 此外，C / SiC复合材料通过同时进行碳化，热处理和超高温热处理而制造，并且不包括步骤（iv）。 步骤（i）的硬化样品通过以5-20mm的间隔制造具有0.5-1.5mm直径的孔，其中用于从步骤（ii）排出分解气体。

公开(公告)号：KR100417161B1

公开(公告)日：2004-02-05

申请号：KR1020010006790

申请日：2001-02-12

Applicant: 국방과학연구소

Inventor： 김연철 ,  원용구 ,  이형식 ,  임광현 ,  신동혁

IPC: C04B35/56 ,  C04B41/52 ,  B32B18/00

CPC classification number: C04B41/52 ,  C04B35/573 ,  C04B35/806 ,  C04B41/5059 ,  C04B2235/428 ,  C04B2235/48 ,  C04B2235/5256 ,  C04B2235/60 ,  C04B2235/616 ,  C04B2235/77 ,  C04B41/4529 ,  C04B41/4556 ,  C04B41/4539 ,  C04B41/5064

Abstract: A method for manufacturing carbon/silicon-carbide composite by a "One-shot' process including carbonization, heat processing, infiltration, and forming an anti-oxidation layer on surface is provided through the steps of: 1) hardening a stacked carbon/phenolic preform; 2) carbonization and heat processing the preform until the temperature reaches at 2300° C.; 3) infiltrating and sintering the liquid metal silicon within the temperature of 1400~1800° C.; and 4) inducting a compound including SiO2to gas phase and heat processing it while forming an anti-oxidation layer on the surface within temperature range of 2000° C.~2700° C. (desirably, in the range of higher than 2300° C., and more desirably, at the temperature near 2500° C.). Herein, the carbonization, heat processing, and ultra-high heat processing might be performed at the same time in the step 2) and the step 4) might not be performed.

Abstract translation: 通过包括碳化，热处理，渗透和在表面上形成抗氧化层的“一步法”工艺来制造碳/碳化硅复合材料的方法通过以下步骤提供：1）将堆叠的碳/ 酚醛预制件; 2）碳化和热处理预制件直至温度达到2300℃; C。; 3）在1400〜1800℃温度范围内渗透并烧结液态金属硅。 C。; 和4）将包含SiO2的化合物引入气相并对其进行热处理，同时在2000℃的温度范围内在表面上形成抗氧化层。 C.〜2700℃下与; （希望在高于2300℃的范围内，更理想的是在2500℃附近的温度下）。 此处，可能在步骤2）中同时进行碳化，热处理和超高温处理，并且可能不执行步骤4）。