公开(公告)号：KR100406592B1

公开(公告)日：2003-11-20

申请号：KR1020010075852

申请日：2001-12-03

Applicant: 김재정

Inventor： 강무성 ,  김수길 ,  김재정

IPC: H01L21/28

Abstract: PURPOSE: A method for forming a metal layer of a semiconductor is provided to reduce a fabricating cost and simplify a fabricating process by forming a copper seed layer and a copper electrolytic layer within the same reactor. CONSTITUTION: A surface of a substrate(100) having a structure of titanium nitride/titanium/silicon(130,120,110) is activated by removing a titanium oxide layer from the substrate. A metal seed layer(140) is formed on the surface of the substrate by dipping an electroless plating solution including metallic salt, reducing agent for reducing metal ions, and pH control agent for controlling pH of the reducing agent. An electrolytic metal layer(150) is formed by applying the reducing electric potential to the substrate formed with electroless metal layer. The metal layer is formed with Cu, Ni, Au, and Pt.

Abstract translation: 目的：提供一种形成半导体金属层的方法，以通过在同一反应器内形成铜晶种层和铜电解质层来降低制造成本并简化制造工艺。 构成：具有氮化钛/钛/硅（130,120,110）结构的衬底（100）的表面通过从衬底去除氧化钛层而被激活。 通过浸渍包含金属盐，用于还原金属离子的还原剂和用于控制还原剂的pH的pH控制剂的无电镀液，在基板的表面上形成金属种子层（140）。 通过向形成有无电金属层的基板施加还原电位来形成电解金属层（150）。 金属层由Cu，Ni，Au和Pt形成。

公开(公告)号：KR1020030045925A

公开(公告)日：2003-06-12

申请号：KR1020010075852

申请日：2001-12-03

Applicant: 김재정

Inventor： 강무성 ,  김수길 ,  김재정

IPC: H01L21/28

Abstract: PURPOSE: A method for forming a metal layer of a semiconductor is provided to reduce a fabricating cost and simplify a fabricating process by forming a copper seed layer and a copper electrolytic layer within the same reactor. CONSTITUTION: A surface of a substrate(100) having a structure of titanium nitride/titanium/silicon(130,120,110) is activated by removing a titanium oxide layer from the substrate. A metal seed layer(140) is formed on the surface of the substrate by dipping an electroless plating solution including metallic salt, reducing agent for reducing metal ions, and pH control agent for controlling pH of the reducing agent. An electrolytic metal layer(150) is formed by applying the reducing electric potential to the substrate formed with electroless metal layer. The metal layer is formed with Cu, Ni, Au, and Pt.

Abstract translation: 目的：提供一种用于形成半导体的金属层的方法，以通过在同一反应器内形成铜籽晶层和铜电解质层来降低制造成本并简化制造工艺。 构成：通过从衬底去除氧化钛层来激活具有氮化钛/钛/硅（130,120,110）结构的衬底（100）的表面。 通过浸渍包括金属盐，还原金属离子还原剂和用于控制还原剂pH的pH控制剂的化学镀溶液，在基材的表面上形成金属种子层（140）。 通过向形成有无电金属层的基板施加还原电位而形成电解金属层（150）。 金属层由Cu，Ni，Au和Pt形成。