公开(公告)号：KR1020030048850A

公开(公告)日：2003-06-25

申请号：KR1020010078893

申请日：2001-12-13

Applicant: 김재정

Inventor： 김재정 ,  김수길 ,  이창화 ,  김용식

IPC: H01L21/3205

Abstract: PURPOSE: A method for forming a copper layer for a semiconductor wiring is provided to be capable of improving the attachment between an anti-diffusing layer and a copper seed layer, and reducing surface resistance by carrying out a high temperature heat treatment. CONSTITUTION: An anti-diffusing layer(120) made of nitride titanium and titanium, is formed on a silicone wafer(110). A copper seed layer(130) is formed on the upper surface of the anti-diffusing layer(120) by a wet or dry etching process. An electrolytically plated copper layer(140) is formed by using the copper seed layer(130) as an electrode. A high temperature heat treatment is then carried out to the resultant structure in the condition of one gas selected from a group consisting of nitride gas, hydrogen gas, or Ar gas, at the temperature of 50-700 °C for 30 seconds to 10 hours.

Abstract translation: 目的：提供一种用于形成半导体布线的铜层的方法，以能够改善抗扩散层和铜籽晶层之间的附着，并通过进行高温热处理来降低表面电阻。 构成：在硅晶片（110）上形成由氮化钛和钛制成的防扩散层（120）。 通过湿法或干蚀刻法在抗扩散层（120）的上表面上形成铜籽晶层（130）。 通过使用铜籽晶层（130）作为电极形成电解铜层（140）。 然后，在50-700℃的温度下，在选自氮化物气体，氢气或Ar气体中的一种气体的条件下对所得结构进行高温热处理30秒至10小时 。

公开(公告)号：KR100426209B1

公开(公告)日：2004-04-06

申请号：KR1020010078893

申请日：2001-12-13

Applicant: 김재정

Inventor： 김재정 ,  김수길 ,  이창화 ,  김용식

IPC: H01L21/3205

Abstract: PURPOSE: A method for forming a copper layer for a semiconductor wiring is provided to be capable of improving the attachment between an anti-diffusing layer and a copper seed layer, and reducing surface resistance by carrying out a high temperature heat treatment. CONSTITUTION: An anti-diffusing layer(120) made of nitride titanium and titanium, is formed on a silicone wafer(110). A copper seed layer(130) is formed on the upper surface of the anti-diffusing layer(120) by a wet or dry etching process. An electrolytically plated copper layer(140) is formed by using the copper seed layer(130) as an electrode. A high temperature heat treatment is then carried out to the resultant structure in the condition of one gas selected from a group consisting of nitride gas, hydrogen gas, or Ar gas, at the temperature of 50-700 °C for 30 seconds to 10 hours.

Abstract translation: 目的：提供一种形成用于半导体布线的铜层的方法，以便能够改进防扩散层和铜晶种层之间的附着，并通过进行高温热处理来降低表面电阻。 构成：在硅晶片（110）上形成由氮化钛和钛制成的抗漫射层（120）。 通过湿法或干法蚀刻工艺在抗扩散层（120）的上表面上形成铜晶种层（130）。 通过使用铜籽晶层（130）作为电极来形成电解电镀铜层（140）。 然后在50-700℃的温度下，在从由氮气，氢气或Ar气组成的组中选择的一种气体的条件下对所得结构进行高温热处理30秒 到10个小时。