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    산소용해장치
    2.
    发明授权
    산소용해장치 有权

    公开(公告)号：KR101126270B1

    公开(公告)日：2012-06-27

    申请号：KR1020090059222

    申请日：2009-06-30

    Applicant: 대한민국(관리부서:국립수산과학원)

    Inventor： 이용화 ,  진현국 ,  심정민 ,  김영숙 ,  황재동 ,  권기영 ,  윤석현 ,  손종철 ,  김상국

    IPC: A01K63/04

    Abstract: 양식장에 산소를 공급하는 산소용해장치가 개시된다. 본 발명은, 액체산소탱크와, 액체산소탱크에서 산소공급관을 통해 산소를 공급받아 배출하는 산소공급부와, 상방향으로 개방된 개구부를 통해 물이 인입되어, 내측 상부 구비된 산소공급부로 부터 공급되는 산소가 용해되는 산소용해부 및, 하측부가 산소용해부의 내측에 구비되어, 산소가 용해되어 상기 산소용해부의 하측에 위치된 물을 펌프를 통해 상측부로 배출하는 배출관을 포함한다.
    양식장, 산소, 공급, 배출, 펌프

    Abstract translation: 目的：提供一种氧气解决方案，它可以提供足够的气泡给海洋养殖区下部栖息的鱼类和海鞘，并持续溶解氧气。 构成：一种氧气溶液装置，包括：液氧罐（110）; 通过氧气供应管从液氧罐提供具有氧气的氧气供应部件（130）并排出氧气; 氧气溶液管（140），在所述氧气溶液管（140）中，流入单元和排出单元形成在两个上侧中，并且将从装配在流入单元中的空气供应部分供应的氧溶解; 和排出溶解有氧的水的泵（150）。

    산소용해장치
    5.
    发明公开
    산소용해장치 有权
    氧气解决方案系统

    公开(公告)号：KR1020110001626A

    公开(公告)日：2011-01-06

    申请号：KR1020090059222

    申请日：2009-06-30

    Applicant: 대한민국(관리부서:국립수산과학원)

    Inventor： 이용화 ,  진현국 ,  심정민 ,  김영숙 ,  황재동 ,  권기영 ,  윤석현 ,  손종철 ,  김상국

    IPC: A01K63/04

    CPC classification number: A01K63/042

    Abstract: PURPOSE: An oxygen solution apparatus is provided, which provides enough bubble to fish and ascidian inhabiting at the lower part of the marine farming area and dissolves oxygen continuously. CONSTITUTION: An oxygen solution apparatus comprises: a liquid oxygen tank(110); an oxygen supply part(130) which is provided with oxygen is provided from the liquid oxygen tank through an oxygen supply pipe and discharges oxygen; an oxygen solution pipe(140) in which an influx unit and an exhausting unit are formed in both upper sides and which dissolves oxygen supplied from the air supply part equipped in the influx unit; and a pump(150) discharging water in which oxygen is dissolved.

    Abstract translation: 目的：提供氧气溶液装置，为海洋养殖区下游的鱼类和腹泻提供足够的泡沫，并持续溶解氧气。 构成：氧溶液装置包括：液氧罐（110）; 通过供氧管从液氧罐提供设有氧的供氧部分（130）并排出氧气; 在两个上侧形成有流入单元和排气单元并且溶解从设置在流入单元中的供气部供给的氧的氧溶液管道（140） 和排出其中溶解氧的水的泵（150）。

    전압을 이용한 강자성박막의 자화용이축 제어방법 및 이를이용한 비휘발성, 초고집적, 초절전형 자기메모리와정보기록방법
    6.
    发明授权
    전압을 이용한 강자성박막의 자화용이축 제어방법 및 이를이용한 비휘발성, 초고집적, 초절전형 자기메모리와정보기록방법 有权
    전압을이용한강자성박막의자화용이축제어방법및이를이용한비휘발성，초고집적，초절전형자기메모리와정보기록방법

    公开(公告)号：KR100451660B1

    公开(公告)日：2004-10-08

    申请号：KR1020020046734

    申请日：2002-08-08

    Applicant: 한국과학기술원 ,  대한민국(서울대학교 총장)

    Inventor： 김상국 ,  신성철 ,  노광수

    IPC: G11C11/15

    Abstract: PURPOSE: A method for controlling a magnetization easy axis of a ferroelectric film using a voltage, a non-volatile, a high-integrated, and a power-saving magnetic memory using the same, and a method for recording information are provided to control the spin direction of the ferroelectric film by using an inverse magnetostriction effect and an inverse piezoelectricity effect. CONSTITUTION: A magnetic memory includes a piezoelectric layer(21), a free magnetic layer(22), a fixed magnetic layer(24), and a non-magnetic layer(22). The piezoelectric layer is formed with a piezoelectric element which is selected from PZT, PLZT, BLY, and SBT. The thickness of the piezoelectric layer is less than 500nm. The magnetic layer is selected from CoPd or ABC alloy where A is Co, Fe, Ni and B is Co, Fe, Ni and C is Pd, Pt, Au, Cu, Al, W. The thickness of the magnetic layer is less than 50nm. The electric field is formed by applying a voltage to an electrode layer in a stacked structure of the electrode layer, the piezoelectric layer, and the magnetic layer. A magnetization easy axis of the magnetic layer is switched between a thin film and a vertical axis by the magnetic field.

    Abstract translation: 目的：提供一种使用电压来控制强电介质膜的磁化易磁化轴的方法，使用该方法的非易失性，高集成度和省电的磁存储器，以及记录信息的方法，以控制 通过使用逆磁致伸缩效应和逆压电效应来使铁电膜的自旋方向发生变化。 构成：磁存储器包括压电层（21），自由磁层（22），固定磁层（24）和非磁层（22）。 压电层由选自PZT，PLZT，BLY和SBT的压电元件形成。 压电层的厚度小于500nm。 磁性层选自CoPd或ABC合金，其中A是Co，Fe，Ni和B是Co，Fe，Ni和C是Pd，Pt，Au，Cu，Al，W。磁性层的厚度小于 50纳米。 电场是通过向电极层，压电层和磁性层的堆叠结构中的电极层施加电压而形成的。 磁层的磁化易磁化轴通过磁场在薄膜和垂直轴之间切换。

    전압을 이용한 강자성박막의 자화용이축 제어방법 및 이를이용한 비휘발성, 초고집적, 초절전형 자기메모리와정보기록방법
    7.
    发明公开
    전압을 이용한 강자성박막의 자화용이축 제어방법 및 이를이용한 비휘발성, 초고집적, 초절전형 자기메모리와정보기록방법 有权
    使用电压，非易失性，高集成度和节能磁记录来控制磁化膜的磁化轴的方法，以及使用它的方法

    公开(公告)号：KR1020030046296A

    公开(公告)日：2003-06-12

    申请号：KR1020020046734

    申请日：2002-08-08

    Applicant: 한국과학기술원 ,  대한민국(서울대학교 총장)

    Inventor： 김상국 ,  신성철 ,  노광수

    IPC: G11C11/15

    CPC classification number: G11C11/161 ,  H01L43/08

    Abstract: PURPOSE: A method for controlling a magnetization easy axis of a ferroelectric film using a voltage, a non-volatile, a high-integrated, and a power-saving magnetic memory using the same, and a method for recording information are provided to control the spin direction of the ferroelectric film by using an inverse magnetostriction effect and an inverse piezoelectricity effect. CONSTITUTION: A magnetic memory includes a piezoelectric layer(21), a free magnetic layer(22), a fixed magnetic layer(24), and a non-magnetic layer(22). The piezoelectric layer is formed with a piezoelectric element which is selected from PZT, PLZT, BLY, and SBT. The thickness of the piezoelectric layer is less than 500nm. The magnetic layer is selected from CoPd or ABC alloy where A is Co, Fe, Ni and B is Co, Fe, Ni and C is Pd, Pt, Au, Cu, Al, W. The thickness of the magnetic layer is less than 50nm. The electric field is formed by applying a voltage to an electrode layer in a stacked structure of the electrode layer, the piezoelectric layer, and the magnetic layer. A magnetization easy axis of the magnetic layer is switched between a thin film and a vertical axis by the magnetic field.

    Abstract translation: 目的：使用电压，非易失性，高集成度和省电的磁存储器来控制强电介质薄膜的易磁化轴的方法，以及用于记录信息的方法来控制 通过使用逆磁致伸缩效应和逆压电效应，铁电体膜的旋转方向。 构成：磁存储器包括压电层（21），自由磁性层（22），固定磁性层（24）和非磁性层（22）。 压电层由选自PZT，PLZT，BLY和SBT的压电元件形成。 压电层的厚度小于500nm。 磁性层选自CoPd或ABC合金，其中A为Co，Fe，Ni和B为Co，Fe，Ni和C为Pd，Pt，Au，Cu，Al，W。磁性层的厚度小于 50纳米。 通过向电极层，压电层和磁性层的堆叠结构中的电极层施加电压而形成电场。 磁性层的易磁化轴通过磁场在薄膜和垂直轴之间切换。

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