Abstract:
양식장에 산소를 공급하는 산소용해장치가 개시된다. 본 발명은, 액체산소탱크와, 액체산소탱크에서 산소공급관을 통해 산소를 공급받아 배출하는 산소공급부와, 상방향으로 개방된 개구부를 통해 물이 인입되어, 내측 상부 구비된 산소공급부로 부터 공급되는 산소가 용해되는 산소용해부 및, 하측부가 산소용해부의 내측에 구비되어, 산소가 용해되어 상기 산소용해부의 하측에 위치된 물을 펌프를 통해 상측부로 배출하는 배출관을 포함한다. 양식장, 산소, 공급, 배출, 펌프
Abstract:
PURPOSE: An oxygen solution apparatus is provided, which provides enough bubble to fish and ascidian inhabiting at the lower part of the marine farming area and dissolves oxygen continuously. CONSTITUTION: An oxygen solution apparatus comprises: a liquid oxygen tank(110); an oxygen supply part(130) which is provided with oxygen is provided from the liquid oxygen tank through an oxygen supply pipe and discharges oxygen; an oxygen solution pipe(140) in which an influx unit and an exhausting unit are formed in both upper sides and which dissolves oxygen supplied from the air supply part equipped in the influx unit; and a pump(150) discharging water in which oxygen is dissolved.
Abstract:
PURPOSE: A method for controlling a magnetization easy axis of a ferroelectric film using a voltage, a non-volatile, a high-integrated, and a power-saving magnetic memory using the same, and a method for recording information are provided to control the spin direction of the ferroelectric film by using an inverse magnetostriction effect and an inverse piezoelectricity effect. CONSTITUTION: A magnetic memory includes a piezoelectric layer(21), a free magnetic layer(22), a fixed magnetic layer(24), and a non-magnetic layer(22). The piezoelectric layer is formed with a piezoelectric element which is selected from PZT, PLZT, BLY, and SBT. The thickness of the piezoelectric layer is less than 500nm. The magnetic layer is selected from CoPd or ABC alloy where A is Co, Fe, Ni and B is Co, Fe, Ni and C is Pd, Pt, Au, Cu, Al, W. The thickness of the magnetic layer is less than 50nm. The electric field is formed by applying a voltage to an electrode layer in a stacked structure of the electrode layer, the piezoelectric layer, and the magnetic layer. A magnetization easy axis of the magnetic layer is switched between a thin film and a vertical axis by the magnetic field.
Abstract:
PURPOSE: A method for controlling a magnetization easy axis of a ferroelectric film using a voltage, a non-volatile, a high-integrated, and a power-saving magnetic memory using the same, and a method for recording information are provided to control the spin direction of the ferroelectric film by using an inverse magnetostriction effect and an inverse piezoelectricity effect. CONSTITUTION: A magnetic memory includes a piezoelectric layer(21), a free magnetic layer(22), a fixed magnetic layer(24), and a non-magnetic layer(22). The piezoelectric layer is formed with a piezoelectric element which is selected from PZT, PLZT, BLY, and SBT. The thickness of the piezoelectric layer is less than 500nm. The magnetic layer is selected from CoPd or ABC alloy where A is Co, Fe, Ni and B is Co, Fe, Ni and C is Pd, Pt, Au, Cu, Al, W. The thickness of the magnetic layer is less than 50nm. The electric field is formed by applying a voltage to an electrode layer in a stacked structure of the electrode layer, the piezoelectric layer, and the magnetic layer. A magnetization easy axis of the magnetic layer is switched between a thin film and a vertical axis by the magnetic field.