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公开(公告)号：KR100878434B1
公开(公告)日：2009-01-13
申请号：KR1020070116778
申请日：2007-11-15
Applicant: 삼성전기주식회사
IPC: H01L33/36
Abstract: A light emitting device and manufacturing method thereof are provided to improve light emitting efficiency by forming electrodes in groove of top surface and side surface of light emitting structure and to reduce contact resistance by increasing contact area of light emitting structure and electrode. A first electrode(12) is formed on a supporting substrate(11). A light emitting structure(13) is formed on the first electrode. A second electrode(14) is formed inside a groove formed on top surface of the light emitting structure. An insulation layer is contacted in side surface of the light emitting structure. A junction between the supporting substrate and the first electrode is formed by a bonding electrode(16). The first electrode is used as a p-type electrode. The second electrode is used as a n-type electrode.
Abstract translation: 提供发光器件及其制造方法以通过在发光结构的顶表面和侧表面的沟槽中形成电极来提高发光效率，并且通过增加发光结构和电极的接触面积来降低接触电阻。 第一电极（12）形成在支撑基板（11）上。 在第一电极上形成发光结构（13）。 第二电极（14）形成在形成在发光结构的顶表面上的凹槽内。 绝缘层在发光结构的侧表面接触。 支撑基板和第一电极之间的接合部由接合电极（16）形成。 第一电极用作p型电极。 第二电极用作n型电极。
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公开(公告)号：KR100809216B1
公开(公告)日：2008-02-29
申请号：KR1020060115992
申请日：2006-11-22
Applicant: 삼성전기주식회사
CPC classification number: H01L33/382
Abstract: A method for fabricating a semiconductor light emitting device with a vertical structure is provided to improve the light extraction efficiency by broadening the contact area of an electrode and a substrate and by increasing the reflection efficiency of an electrode structure. A semiconductor layer(12) of a first conductivity type, an active layer(13) and a semiconductor layer(14) of a second conductivity type are sequentially grown on a conductive substrate(11) with light transmission. A groove of a concave type is formed on the lower surface of the conductive substrate. A high reflective metal layer(17) is formed in the concave part of the groove. A first electrode(18) is formed on the lower surface of the conductive substrate to fill the groove. A second electrode(16) is formed on the semiconductor layer of the second conductivity type.
Abstract translation: 提供一种用于制造具有垂直结构的半导体发光器件的方法，以通过扩大电极和衬底的接触面积以及增加电极结构的反射效率来提高光提取效率。 第一导电类型的半导体层（12），具有第二导电类型的有源层（13）和半导体层（14）在具有透光性的导电基板（11）上顺序地生长。 在导电性基板的下表面形成有凹型槽。 在凹槽的凹部中形成高反射金属层（17）。 第一电极（18）形成在导电基板的下表面上以填充凹槽。 第二电极（16）形成在第二导电类型的半导体层上。
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公开(公告)号：KR1020070107270A
公开(公告)日：2007-11-07
申请号：KR1020060039547
申请日：2006-05-02
Applicant: 삼성전기주식회사
IPC: H01L33/20
Abstract: A light emitting diode device is provided to improve light extraction efficiency of the device by using a substrate having a curved surface to minimize a light loss caused by the total reflection. A substrate has a curved surface. An n-type nitride gallium film(130) is formed at the substrate. An active layer(140) is formed at a lower portion of the n-type nitride gallium layer. A p-type nitride gallium layer(150) is formed at a lower portion of the active layer. A p-type electrode(160) is formed at a bottom of the p-type nitride gallium layer. An n-type electrode(170) is formed at a bottom of the n-type nitride gallium layer where the active layer is not formed.
Abstract translation: 提供了一种发光二极管器件，以通过使用具有弯曲表面的衬底来提高器件的光提取效率，以最小化由全反射引起的光损耗。 基板具有曲面。 在衬底上形成n型氮化镓膜（130）。 在n型氮化物镓层的下部形成有源层（140）。 p型氮化镓层（150）形成在有源层的下部。 p型电极（160）形成在p型氮化镓层的底部。 n型电极（170）形成在没有形成有源层的n型氮化镓层的底部。
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公开(公告)号：KR100946021B1
公开(公告)日：2010-03-09
申请号：KR1020080039991
申请日：2008-04-29
Applicant: 삼성전기주식회사
IPC: G02F1/13357
Abstract: 본 발명은 측면형 광원을 사용하면서도 액정 사이즈가 넓은 액정 표시 장치에 사용될 수 있는 경박형 백라이트 유닛에 관한 것으로, 일정 길이를 가지며 길이방향으로 일측면이 개방된 내부 공간이 형성되고, 상기 일측면으로부터 상기 내부 공간으로 조사된 광을 반사시켜 광 진행 방향을 변환하여 출사하는 적어도 하나의 광 가이드와, 상기 광 가이드의 일측면에 상기 광을 조사하는 광원을 포함하는 것을 특징으로 한다.
액정 표시 장치(Liquid Crystal Display), 백라이트 유닛(Back-Light Unit), 측면형(Edge Type), 직하형(Direct Type)-
公开(公告)号：KR100887072B1
公开(公告)日：2009-03-04
申请号：KR1020070105327
申请日：2007-10-19
Applicant: 삼성전기주식회사
IPC: H01L33/62
Abstract: A semiconductor light emitting device and a semiconductor light emitting device package using the same are provided to maximize luminous efficiency by securing a maximum light emitting area and by minimizing reflection or absorption of an emitted light. A semiconductor light emitting device(100) comprises a first conductive semiconductor layer(110), an active layer(120), a second conductive semiconductor layer(130), a second electrode layer(140), an electrode insulation part(150), a first electrode layer(160), and a conductive substrate. The conductive substrate includes a first conductive substrate(171), a second conductive substrate(172), and a substrate insulation part(180). The first conductive substrate is contacted with the first electrode layer. The second conductive substrate is contacted with the second electrode layer. The substrate insulation part electrically separates the first and the second conductive substrates. The first electrode layer is contacted with the first conductive semiconductor layer, and is isolated with the second conductive substrate. The second electrode layer is contacted with the second conductive substrate, and is isolated with the first electrode layer.
Abstract translation: 提供半导体发光器件和使用其的半导体发光器件封装，以通过确保最大发光面积并且通过最小化发射光的反射或吸收来最大化发光效率。 半导体发光器件（100）包括第一导电半导体层（110），有源层（120），第二导电半导体层（130），第二电极层（140），电极绝缘部分（150） 第一电极层（160）和导电基板。 导电基板包括第一导电基板（171），第二导电基板（172）和基板绝缘部分（180）。 第一导电基板与第一电极层接触。 第二导电衬底与第二电极层接触。 基板绝缘部件电隔离第一和第二导电基板。 第一电极层与第一导电半导体层接触，并与第二导电基板隔离。 第二电极层与第二导电基板接触，并与第一电极层隔离。
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Patent Agency Ranking
公开(公告)号：KR100771811B1
公开(公告)日：2007-10-30
申请号：KR1020050130652
申请日：2005-12-27
Applicant: 삼성전기주식회사
IPC: H01L33/50
CPC classification number: H01L33/50 , H01L25/0753 , H01L2924/0002 , H01L2924/00
Abstract: 효율과 색재현성이 개선된 백색 발광 장치를 제공한다. 본 발명의 일 실시 형태는, 청색과 녹색 파장의 빛을 발하는 하나의 청색/녹색 LED와, 적색 파장의 빛을 발하는 LED, PRS 및 형광체 중 적어도 하나를 구비하는 적색 발광 수단 및 상기 청색/녹색 LED로부터의 빛을 받아 황색 파장의 빛을 발하는 황색 형광체를 포함하는 백색 발광 장치를 제공한다.
본 발명에 따르면, 2개 이하의 LED를 사용하여 4파장 이상의 넓은 스펙트럼을 갖는 백색광을 출력함으로써, 백색 발광 장치는 우수한 색재현성과 높은 효율을 갖게 된다.
발광 다이오드, LED, 백색 발광, 형광체Abstract translation: 提供了效率和颜色再现性得到改善的白色发光装置。 本发明中，蓝色光，一个用于蓝色/绿色LED，其发出绿色波长的光的一个实施例发射红色波长的LED，PRS的光，并且包括磷光体中的至少一个和所述蓝色/绿色LED的红色光发射装置 黄色磷光体发出黄色波长的光。
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公开(公告)号：KR1020070068709A
公开(公告)日：2007-07-02
申请号：KR1020050130652
申请日：2005-12-27
Applicant: 삼성전기주식회사
IPC: H01L33/50
CPC classification number: H01L33/50 , H01L25/0753 , H01L2924/0002 , H01L2924/00
Abstract: A white light emitting device is provided to output white light having a wide spectrum with 4 wavelengths by using two or less light emitting diodes, thereby achieving superior color reproducibility and high efficiency. A white light emitting device includes a blue/green light emitting diode(101) for emitting blue and green wavelengths of light and a red light emitting member(102) for emitting red wavelength of light, in which it emits at least four wavelengths of white light using two or less than light emitting diodes. The white light has a light emission spectrum with a blue peak wavelength in the range of 440 to 470 nm, and a green peak wavelength in the range of 500 to 530 nm, a yellow peak wavelength in the range of 560 to 580 nm and a red peak wavelength in the range of 620 to 640 nm.
Abstract translation: 通过使用两个或更少的发光二极管，提供白色发光器件以输出具有4个波长的宽光谱的白光，从而实现优异的色彩再现性和高效率。 白色发光器件包括用于发射蓝色和绿色波长的光的蓝色/绿色发光二极管（101）和用于发射红色波长的光的红色发光部件（102），其中它发出至少四个波长的白色 使用两个或更少的发光二极管的光。 白光具有蓝色峰值波长在440〜470nm范围内的绿色峰值波长，在500〜530nm的范围内的绿色峰值波长，560〜580nm的黄色峰值波长和 在620至640nm的范围内的红色峰值波长。
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公开(公告)号：KR100878428B1
公开(公告)日：2009-01-13
申请号：KR1020070093774
申请日：2007-09-14
Applicant: 삼성전기주식회사
IPC: H01L33/12
Abstract: A semiconductor light emitting device is provided to facilitate process after contacting and to reduce light property loss by reducing stress due to difference of thermal expansion coefficient when substrate is contacted with semiconductor laminate. A semiconductor light emitting device(100) comprises a laminate, a supporting substrate(160), and a bonding layer(150). The bonding layer is formed between the laminate and the supporting substrate. The laminate successively has a first conduction type semiconductor layer(130), an active layer(120), and a second conduction type semiconductor layer(110). The semiconductor light emitting device includes a diffusion preventing layer(140) formed in one side or both sides of the bonding layer. The diffusion preventing layer has thermal expansion coefficient identical or similar with thermal expansion coefficient of a layer contacted among the laminate and the supporting substrate.
Abstract translation: 提供半导体发光器件以便于接触之后的工艺，并且通过当衬底与半导体层压体接触时由于热膨胀系数的差异而减小应力而降低光损耗。 半导体发光器件（100）包括层压体，支撑衬底（160）和结合层（150）。 接合层形成在层压体和支撑基板之间。 层叠体依次具有第一导电型半导体层（130），有源层（120）和第二导电型半导体层（110）。 半导体发光器件包括在接合层的一侧或两侧形成的扩散防止层（140）。 扩散防止层的热膨胀系数与层压体和支撑基板之间接触的层的热膨胀系数相同或相似。
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公开(公告)号：KR100814918B1
公开(公告)日：2008-03-19
申请号：KR1020060039547
申请日：2006-05-02
Applicant: 삼성전기주식회사
IPC: H01L33/20
Abstract: 본 발명은 발광 다이오드 소자에 관한 것으로서, 곡면을 구비한 기판; 상기 기판 하부에 형성된 n형 질화갈륨층; 상기 n형 질화갈륨층 하부의 일부분에 형성된 활성층; 상기 활성층 하부에 형성된 p형 질화갈륨층; 상기 p형 질화갈륨층 하부에 형성된 p형 전극; 및 상기 활성층이 형성되지 않은 상기 n형 질화갈륨층 하부에 형성된 n형 전극을 포함하는 발광 다이오드 소자를 제공한다.
LED, 사파이어 기판, 반구, 광추출 효율-
公开(公告)号：KR100770440B1
公开(公告)日：2007-10-26
申请号：KR1020060082374
申请日：2006-08-29
Applicant: 삼성전기주식회사
IPC: H01L33/14
Abstract: A nitride semiconductor light emitting device is provided to improve the light emissive efficiency of the device and to enhance ESD(ElectroStatic Discharge) characteristics by forming an electron emitting layer using GaxSc(1-x)N/AlyGa(1-y)N(0
Abstract translation: 提供氮化物半导体发光器件，以通过使用GaxSc（1-x）N / AlyGa（1-y）N（0）的形式形成电子发射层来提高器件的发光效率和增强ESD（ElectroStatic Discharge）特性 <= x <1,0 <= y <1）层或GaxY（1-x）N / AlyGa（1-y）N（0≤x≤1,0<= y <1） InGaN / GaN层。 氮化物半导体发光器件包括N型氮化物半导体层（220），电子发射层，有源层和P型氮化物半导体层。 电子发射层（230）形成在N型氮化物半导体层上。 电子发射层由包含第三组的过渡元素的预定氮化物半导体层制成。 有源层（240）形成在电子发射层上。 P型氮化物半导体层（250）形成在有源层上。 电子发射层由一个或多个GaxSc（1-x）N / AlyGa（1-y）N（0 <= x <1,0 <= y <1）层组成。
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