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公开(公告)号:KR1020120060541A
公开(公告)日:2012-06-12
申请号:KR1020100122086
申请日:2010-12-02
Applicant: 삼성전기주식회사
CPC classification number: H01C1/148 , H01C1/142 , H01C17/006 , H01C17/02 , H01C17/065
Abstract: PURPOSE: A chip resister and a manufacturing method thereof are provided to improve the electric characteristics of a chip resister by increasing the length and effective area of a resistance. CONSTITUTION: A resistance(20) is prepared on the top of an insulating substrate(10). A part of each end of the resistance is exposed o the insulating substrate. The resistance comprises a material like nickel chrome. An inner protective layer(30) is formed to expose both ends of the resistance. First and second electrodes(41,43) are formed to cover both ends of the resistance and both ends of the inner protective layer. An outer protective layer(35) is formed on the top of the first and second electrodes to cover a part of the first electrode and a part of the second electrode.
Abstract translation: 目的:提供一种芯片电阻及其制造方法,通过增加电阻的长度和有效面积来提高芯片电阻的电特性。 构成:在绝缘基板(10)的顶部准备电阻(20)。 电阻的每一端的一部分暴露在绝缘基板上。 电阻包括镍铬等材料。 形成内部保护层(30)以露出电阻的两端。 形成第一和第二电极(41,43)以覆盖电阻的两端和内部保护层的两端。 外保护层(35)形成在第一和第二电极的顶部上,以覆盖第一电极的一部分和第二电极的一部分。