公开(公告)号：KR102070724B1

公开(公告)日：2020-01-30

申请号：KR1020130034532

申请日：2013-03-29

Applicant: 삼성전자주식회사

Inventor： 남상완 ,  고귀한 ,  안양노 ,  박기태

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/30

公开(公告)号：KR1020140119365A

公开(公告)日：2014-10-10

申请号：KR1020130034532

申请日：2013-03-29

Applicant: 삼성전자주식회사

Inventor： 남상완 ,  고귀한 ,  안양노 ,  박기태

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/30

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3427

Abstract: A method to drive a non-volatile memory device, having a plurality of strings formed by penetrating word lines in a panel shape piled on a substrate, includes the steps of: receiving a program order and an address; changing the number of adjacent zones among multiple zones composed by non-selective word lines by the positions of selective word lines corresponding to the inputted address; and authorizing voltages of different zones including the adjacent zones and the other zones.

Abstract translation: 一种用于驱动非易失性存储器件的方法，所述非易失性存储器件具有穿过堆叠在衬底上的面板形状的字线形成的多个串，包括以下步骤：接收程序顺序和地址; 通过与输入的地址相对应的选择字线的位置来改变由非选择性字线组成的多个区域中的相邻区域的数量; 并授权包括相邻区域和其他区域在内的不同区域的电压。