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公开(公告)号：KR101575812B1
公开(公告)日：2015-12-09
申请号：KR1020090005174
申请日：2009-01-21
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01M10/02
CPC classification number: H01L27/10897 , H01L23/58 , H01L25/0657 , H01L25/16 , H01L27/10876 , H01L27/10894 , H01L2225/06513 , H01L2225/06541 , H01L2225/06572 , H01L2924/0002 , H01L2924/00
Abstract: 데이터저장장치를제공한다. 상기데이터저장장치는인터페이스, 버퍼제어기, 메모리제어기, 비휘발성메모리, 및상기버퍼제어기에인접하고전기적으로접속된자가전원반도체장치로구성된다. 상기자가전원반도체장치는반도체칩 및상기반도체칩에부착된충전마이크로배터리를구비한다. 상기충전마이크로배터리는서로마주보도록형성된제 1 집전전극및 제 2 집전전극, 상기제 1 집전전극에접촉되고상기제 2 집전전극과마주보는제 1 분극전극(first polarizing electrode), 상기제 2 집전전극에접촉되고상기제 1 분극전극과마주보는제 2 분극전극(second polarizing electrode), 및상기제 1 분극전극및 상기제 2 분극전극사이에형성된전해질층을구비한다.
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公开(公告)号：KR1020100085733A
公开(公告)日：2010-07-29
申请号：KR1020090005174
申请日：2009-01-21
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01M10/02
CPC classification number: H01L27/10897 , H01L23/58 , H01L25/0657 , H01L25/16 , H01L27/10876 , H01L27/10894 , H01L2225/06513 , H01L2225/06541 , H01L2225/06572 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A data storage device including a self-powered semiconductor device is provided to increase an operation speed and reduce an error generation rate by including a charging micro battery to stably provide power to a semiconductor chip. CONSTITUTION: A buffer controller(15) is electrically connected to an interface(13). A memory controller(16) is electrically connected to the buffer controller. A nonvolatile memory(18) is electrically connected to the memory controller. A self-powered semiconductor device(19) is electrically connected to the buffer controller. The self-powered semiconductor device includes a semiconductor chip and a charging micro battery attached to the semiconductor chip.
Abstract translation: 目的：提供包括自供电半导体装置的数据存储装置，以通过包括充电微型电池来稳定地向半导体芯片提供电力来提高操作速度并降低误差产生速率。 构成：缓冲控制器（15）电连接到接口（13）。 存储器控制器（16）电连接到缓冲器控制器。 非易失性存储器（18）电连接到存储器控制器。 自供电的半导体器件（19）电连接到缓冲器控制器。 自供电的半导体器件包括半导体芯片和附接到半导体芯片的充电微型电池。
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