公开(公告)号：KR1020070093189A

公开(公告)日：2007-09-18

申请号：KR1020060022995

申请日：2006-03-13

Applicant: 삼성전자주식회사

Inventor： 김경민 ,  신동룡

IPC: H01L27/04 ,  H01L21/205

CPC classification number: H01L28/91 ,  H01L21/02068 ,  H01L21/31116 ,  H01L21/321

Abstract: A method for forming a lower metal electrode of an MIM capacitor is provided to reduce remarkably the generation of defects at the lower metal electrode in an ashing process by performing a heat treatment on a substrate with the lower metal electrode before forming a dielectric film. A semiconductor substrate(11) having a storage node hole(23) is provided. A conductive layer for a lower metal electrode and a buffer insulating layer are sequentially formed on the substrate. A lower metal electrode(26) is formed in the storage node hole by etching selectively the buffer insulating layer and the conductive layer. The buffer insulating layer is removed from the resultant structure by performing an ashing process on the substrate with the lower metal electrode. A cleaning process is performed on the resultant structure. A heat treatment is performed on the resultant structure.

Abstract translation: 提供了形成MIM电容器的下部金属电极的方法，通过在形成电介质膜之前通过在具有下部金属电极的基板上进行热处理，在灰化处理中显着降低下部金属电极的缺陷的产生。 提供具有存储节点孔（23）的半导体衬底（11）。 用于下部金属电极和缓冲绝缘层的导电层依次形成在基板上。 通过选择性地蚀刻缓冲绝缘层和导电层，在存储节点孔中形成下部金属电极（26）。 通过在具有下部金属电极的基板上进行灰化处理，从所得到的结构中去除缓冲绝缘层。 对所得结构进行清洁处理。 对所得结构进行热处理。