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Patent Agency Ranking
公开(公告)号：KR1020100104124A
公开(公告)日：2010-09-29
申请号：KR1020090022315
申请日：2009-03-16
Applicant: 삼성전자주식회사
IPC: H03K19/0185 , H03K19/00
CPC classification number: H03K19/018521
Abstract: PURPOSE: A logic circuit for performing a level shifting operation is provided to perform the level shifting operation in a logic gate block with respect to a power voltage by including p-type metal oxide semiconductor transistors and inverters connected with the logic gate block. CONSTITUTION: A logic gate block(320) outputs a first signal by receiving an input signal. The logic gate block includes a complementary metal oxide semiconductor logic gate inverters(321, 322). Inverters(310, 330) output a second signal by receiving the first signal. A switching circuit transmits the power voltage of the logic gate block with either of a first power voltage(VDDP) or a second power voltage(VDDC) in response with the first signal and the second signal. The voltage levels of the first power voltage and the second power voltage are different.
Abstract translation: 目的：提供一种用于执行电平移位操作的逻辑电路，通过包括与逻辑门控块连接的p型金属氧化物半导体晶体管和反相器来执行关于电源电压的逻辑门极块中的电平移位操作。 构成：逻辑门块（320）通过接收输入信号来输出第一信号。 逻辑门极块包括互补金属氧化物半导体逻辑门反相器（321,322）。 逆变器（310,330）通过接收第一信号来输出第二信号。 响应于第一信号和第二信号，开关电路以第一电源电压（VDDP）或第二电源电压（VDDC）中的任一个传输逻辑门块的电源电压。 第一电源电压和第二电源电压的电压不同。
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公开(公告)号：KR101623117B1
公开(公告)日：2016-05-23
申请号：KR1020090022315
申请日：2009-03-16
Applicant: 삼성전자주식회사
IPC: H03K19/0185 , H03K19/00
CPC classification number: H03K19/018521
Abstract: 본발명의로직회로는전원전압을공급받고, 입력신호를입력받아서제1 신호를출력하는로직게이트블록과, 상기제1 신호를입력받고, 제2 신호를출력하는인버터, 그리고상기제1 및제2 신호들에응답해서제1 및제2 전원전압들중 어느하나를상기로직게이트블록의상기전원전압으로제공하는스위칭회로를포함한다. 이와같은로직회로는상기제1 전원전압과제2 전원전압이서로다를때 안정적으로레벨쉬프팅을수행할수 있다.
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