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公开(公告)号：KR1020170104073A
公开(公告)日：2017-09-14
申请号：KR1020160026263
申请日：2016-03-04
Applicant: 삼성전자주식회사
CPC classification number: G06F11/1068 , G06F3/0619 , G06F3/065 , G06F3/0665 , G06F3/0689 , G06F11/1012 , G06F11/108 , G06F11/142 , G06F2201/805 , G06F2201/85 , G11C29/021 , G11C29/028 , G11C29/52 , G11C29/74 , G11C2029/0409 , G11C2029/0411
Abstract: 본발명의실시예에따른복수의불휘발성메모리장치들을포함하는레이드(RAID) 스토리지장치의리커버리방법은, 상기복수의불휘발성메모리장치들로부터정정불가에러가발생한데이터청크를읽어오는단계, 상기데이터청크와관련된스트라이프중에서상기데이터청크를포함하지않으며, 패리티를포함하는복수의서브-스트라이프들을선택하는단계, 그리고상기데이터청크를복구하기위해읽기레벨조정을포함하는제 1 리커버리동작과, 상기복수의서브-스트라이프들을처리하여상기데이터청크가포함되는서브-스트라이프를복구하기위한제 2 리커버리동작을병행하는단계를포함하되, 상기제 1 리커버리동작과상기제 2 리커버리동작중 먼저완료되는어느하나에따라상기병행하는단계가종료된다.
Abstract translation: 根据本发明实施例的包括多个非易失性存储器件的RAID存储装置的恢复方法包括：从多个非易失性存储器件读取其中发生不可纠错的数据块， 在与组块相关联的条带中选择不包括数据组块的多个子条带并且包括奇偶校验，并且执行包括读取级别调整的第一恢复操作以恢复数据组块， 并且通过处理子条带来执行用于恢复包括数据块的子条带的第二恢复操作，其中首先完成第一恢复操作和第二恢复操作， 并发步骤结束。
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公开(公告)号：KR1020140104189A
公开(公告)日：2014-08-28
申请号：KR1020130018066
申请日：2013-02-20
Applicant: 삼성전자주식회사
CPC classification number: G06F11/1666 , G06F11/073 , G06F11/0751 , G06F12/0246 , G06F2212/7202 , G11C29/76
Abstract: The present invention relates to a nonvolatile memory device and a data processing method thereof. According to the present invention, the nonvolatile memory device receives data requested to be written and a logical address thereof from a host. The nonvolatile memory device includes a nonvolatile memory which includes a memory block consisting of a plurality of pages; and a controller which controls the nonvolatile memory to write the data requested to be written in the memory block, wherein when a part of the pages is the bad pages, the controller maps the logical address of the data requested to be written to a physical address of the nonvolatile memory such that the data requested to be written can be written in an area except bad pages, with reference to a bad page map, and wherein the controller controls the nonvolatile memory to write dummy data in the bad pages when a writing operation of the data requested to be written is performed. According to the present invention, the nonvolatile memory device and the data processing method thereof can improve lifetime and accuracy by managing lifetime in page units.
Abstract translation: 非易失性存储器件及其数据处理方法技术领域本发明涉及非易失性存储器件及其数据处理方法。 根据本发明，非易失性存储装置从主机接收请求写入的数据及其逻辑地址。 非易失性存储器件包括非易失性存储器，其包括由多页构成的存储块; 以及控制器，其控制非易失性存储器将请求写入的数据写入存储器块中，其中当一部分页面是坏页面时，控制器将请求写入的数据的逻辑地址映射到物理地址 的非易失性存储器，使得要写入的数据可以被写入除了坏页面之外的区域，参考不良页面映射，并且其中当写入操作时，控制器控制非易失性存储器将伪数据写入坏页面 执行要被写入的数据。 根据本发明，非易失性存储器件及其数据处理方法可以通过以页面单位管理寿命来提高寿命和精度。
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Patent Agency Ranking
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公开(公告)号：KR1020140103755A
公开(公告)日：2014-08-27
申请号：KR1020130017626
申请日：2013-02-19
Applicant: 삼성전자주식회사
CPC classification number: G06F12/0246 , G06F2212/1032 , G06F2212/7205
Abstract: According to an embodiment of the present invention, a memory controller controls a non-volatile memory device having a plurality of memory blocks as a data storage space. The memory controller includes: an error detection and correction circuit which compares a threshold value with a bit error rate calculated based on data received from the non-volatile memory device, and which produces comparison results; and a reclaim control unit which receives the comparison results from the error detection and correction circuit, and which determines whether to execute a read reclaim operation of copying the data to another memory block different from a memory block where the data have been stored, based on a level of a reading voltage used to read the data, wherein the reclaim control unit controls the non-volatile memory device not to perform the read reclaim operation when a level of the reading voltage is included in a predetermined area.
Abstract translation: 根据本发明的实施例，存储器控制器控制具有多个存储器块的非易失性存储器件作为数据存储空间。 存储器控制器包括：误差检测和校正电路，其将阈值与基于从非易失性存储器件接收的数据计算的误码率进行比较，并产生比较结果; 以及回收控制单元，其接收来自所述错误检测和校正电路的比较结果，并且基于所述回收控制单元，基于所述回收控制单元，基于所述回收控制单元接收来自所述错误检测和校正电路的比较结果，并且其基于 用于读取数据的读取电压的电平，其中当读取电压的电平被包括在预定区域中时，回收控制单元控制非易失性存储器件不执行读取回收操作。
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公开(公告)号：KR1020140096875A
公开(公告)日：2014-08-06
申请号：KR1020130010019
申请日：2013-01-29
Applicant: 삼성전자주식회사
CPC classification number: G06F12/0246 , G06F2212/7202 , G06F2212/7207
Abstract: A memory system according to an embodiment of the present invention comprises a non-volatile memory device including multiple blocks and meta areas; and a memory controller which controls the non-volatile memory device. The meta areas save the number of erasure, a ready-to-use list, a long term list, and block retry information. The memory controller carries out wear leveling of the multiple blocks using the number of erasure and the block retry information.
Abstract translation: 根据本发明的实施例的存储器系统包括：包括多个块和元区的非易失性存储器件; 以及控制非易失性存储器件的存储器控制器。 元区保存擦除次数，即用型列表，长期列表和块重试信息。 存储器控制器使用擦除次数和块重试信息来执行多个块的磨损均衡。
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公开(公告)号：KR1020140103756A
公开(公告)日：2014-08-27
申请号：KR1020130017627
申请日：2013-02-19
Applicant: 삼성전자주식회사
CPC classification number: G06F11/1048
Abstract: A memory controller according to an embodiment of the present invention controls a nonvolatile memory device. The memory controller includes a memory which stores a plurality of read data transmitted from the nonvolatile memory device, an ECC circuit which detects an error bit of partial data forming each read data and determines whether to correct the partial data based on the detected error bit, and a processing unit which determines a representative value by analyzing the partial data whose correction is impossible according to the determination result of the ECC circuit and transmits the representative value to the ECC circuit. The read data is read by the reading operation of the same logic page.
Abstract translation: 根据本发明的实施例的存储器控制器控制非易失性存储器件。 存储器控制器包括存储从非易失性存储器件发送的多个读取数据的存储器，ECC电路，其检测形成每个读取数据的部分数据的错误位，并且基于检测到的错误位确定是否校正部分数据， 以及处理单元，其通过根据ECC电路的确定结果分析不可能校正的部分数据来确定代表值，并将代表值发送到ECC电路。 通过同一逻辑页面的读取操作来读取读取的数据。
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