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公开(公告)号:KR1020130129555A
公开(公告)日:2013-11-29
申请号:KR1020120053529
申请日:2012-05-21
CPC classification number: H01L33/22 , H01L33/38 , H01L2933/0091
Abstract: The present invention relates to a semiconductor light emitting device. Provided is the light emitting device comprising: a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second semiconductor layer; and a light extracting layer comprising a light-transmitting thin film layer having an optical transmittance, and a nanorod layer consisting of a plurality of nanorods formed on the light-transmitting thin film layer, wherein the light extracting layer is made up of one substance selected from the group consisting of polydimethyl siloxane (PDMS), a compound of the PDMS and ZrO_2 nanoparticles, a compound of poly(glycidyl methacrylate) (PGMA) and TiO_2 nanoparticles, and a compound of polymethyl methacrylate (PMMA) and BaTiO3 nanoparticles.
Abstract translation: 本发明涉及一种半导体发光器件。 提供的发光器件包括:发光结构,包括第一导电半导体层,有源层和第二半导体层; 以及包含具有光透射率的透光薄膜层和由形成在透光薄膜层上的多个纳米棒组成的纳米棒的光提取层,其中所述光提取层由选择的一种物质组成 来自聚二甲基硅氧烷(PDMS),PDMS和ZrO 2纳米颗粒的化合物,聚(甲基丙烯酸缩水甘油酯)(PGMA)和TiO 2纳米颗粒的化合物,以及聚甲基丙烯酸甲酯(PMMA)和BaTiO 3纳米颗粒的化合物。
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