公开(公告)号：KR1020140113191A

公开(公告)日：2014-09-24

申请号：KR1020130028268

申请日：2013-03-15

Applicant: 삼성전자주식회사

Inventor： 김대정 ,  김갑용 ,  이광우 ,  이헌 ,  조인호

IPC: G11C29/00 ,  G11C11/406

CPC classification number: G11C11/40618 ,  G11C11/40603 ,  G11C29/70 ,  G11C29/783 ,  G11C2211/4061

Abstract: According to the present invention, a semiconductor memory device includes: a normal memory cell block including a plurality of normal memory cells; a redundancy memory cell block including a plurality of redundancy memory cells for replacing repair memory cells of the normal memory cells; a weak cell information storage unit configured to, in response to a refresh command, store information on weak memory cells included in the normal and redundancy memory cell blocks; and a refresh control circuit configured to control memory cells corresponding to a refresh address among the normal memory cells and the redundancy memory cells to be refreshed and to control weak memory cells to be refreshed based on information on at least one weak memory cell stored in the weak cell information storage unit, wherein the weak memory cells are additionally refreshed at least once more than other memory cells by the refresh control circuit during a refresh cycle of the normal memory cells.

Abstract translation: 根据本发明，半导体存储器件包括：包括多个正常存储单元的正常存储单元块; 冗余存储单元块，包括用于替换正常存储器单元的修复存储单元的多个冗余存储单元; 弱单元信息存储单元，被配置为响应于刷新命令，存储关于包括在正常和冗余存储单元块中的弱存储单元的信息; 以及刷新控制电路，被配置为控制对应于要刷新的正常存储器单元和冗余存储单元中的刷新地址的存储单元，并且基于存储在所述存储单元中的至少一个弱存储器单元的信息来控制要刷新的弱存储器单元 弱小区信息存储单元，其中在正常存储器单元的刷新周期期间，刷新控制电路至少比其他存储器单元刷新弱存储器单元一次。

公开(公告)号：KR1020140063240A

公开(公告)日：2014-05-27

申请号：KR1020120130381

申请日：2012-11-16

Applicant: 삼성전자주식회사

Inventor： 김대정 ,  김갑용 ,  이광우 ,  이헌 ,  조인호

IPC: G11C29/00 ,  G11C11/406 ,  G11C11/4063

CPC classification number: G11C11/40603 ,  G11C11/406 ,  G11C16/3418 ,  G11C29/82 ,  G11C2211/4063

Abstract: Disclosed is an improved refresh leveraging driving method in a volatile semiconductor memory like DRAM. The refresh leveraging driving method includes the step of determining word lines to be driven in a refresh leveraging operation with the same unit as a redundancy repair row unit. Also, the driving method includes the steps of: not caring a lower row address in the applied refresh leveraging address by corresponding to the determined refresh leveraging row driving unit; and driving the word lines according to the combined refresh leveraging address by internally generating the lower row address which is not cared in the refresh leveraging address.

Abstract translation: 公开了一种在像DRAM这样的易失性半导体存储器中的改进的刷新利用驱动方法。 刷新利用驱动方法包括以与冗余修复行单元相同的单元在刷新利用操作中确定要被驱动的字线的步骤。 此外，驱动方法包括以下步骤：通过与所确定的刷新利用行驱动单元相对应，不在所施加的刷新利用地址中占用较低行地址; 并根据组合的刷新利用地址通过内部生成不在刷新利用地址中的下行地址来驱动字线。