公开(公告)号：KR1020090007056A

公开(公告)日：2009-01-16

申请号：KR1020070070670

申请日：2007-07-13

Applicant: 삼성전자주식회사

Inventor： 쿤잘패릭 ,  최준후 ,  허종무

IPC: G02F1/1345

CPC classification number: G02F1/1309 ,  G02F1/1345 ,  H01L29/786

Abstract: A method for testing thin film transistor is provided to reduce the testing time for estimating life time of the thin film transistor by applying higher stress current for 100 hours. An SPC-TFT(100) used for the life prospect experiment has the linear structure in which the gate electrode(101) and drain electrode(102) are electrically connected. An acceleration stress current(Is) which is higher than the normality stress current is provided to the SPC-TFT. The channel width ratio about the channel length of the SPC-TFT used for the life time prospect experiment is 200/4. The life time prospect experiment is performed in the temperature environment of 40°C, applying the acceleration stress current to the source electrode.

Abstract translation: 提供一种测试薄膜晶体管的方法，通过施加较高的应力电流100小时来减少测量薄膜晶体管寿命的测试时间。 用于生命前景实验的SPC-TFT（100）具有栅电极（101）和漏电极（102）电连接的线性结构。 提供高于正常应力电流的加速应力电流（Is）到SPC-TFT。 关于寿命预期实验中使用的SPC-TFT的通道长度的通道宽度比为200/4。 寿命前景实验在40℃的温度环境下进行，对源电极施加加速应力电流。