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    데이터의 특성에 따라 싱글 레벨 셀 또는 멀티 레벨 셀에데이터를 저장하는 불휘발성 메모리 시스템
    2.
    发明公开
    데이터의 특성에 따라 싱글 레벨 셀 또는 멀티 레벨 셀에데이터를 저장하는 불휘발성 메모리 시스템 有权
    基于数据特征的单电池或多电平电池的非易失性存储器系统存储数据

    公开(公告)号：KR1020080040426A

    公开(公告)日：2008-05-08

    申请号：KR1020060108382

    申请日：2006-11-03

    Applicant: 삼성전자주식회사

    Inventor： 이양섭 ,  탈라와프라카스 ,  박찬익

    IPC: G11C16/04

    CPC classification number: G06F3/0643 ,  G06F3/0613 ,  G06F3/0616 ,  G06F3/064 ,  G06F3/0679 ,  G06F3/068 ,  G06F12/0246 ,  G06F2212/7202 ,  G06F2212/7211 ,  G11C2211/5641 ,  G11C11/56

    Abstract: A non-volatile memory system storing data in a single-level cell or a multi-level cell according to the characteristics of data is provided to improve the performance of the system, by selecting a region to store data among the single-level cell and the multi-level cell according to the characteristics of the data. A non-volatile memory cell array(190) includes a number of multi-level cells(MLC) and a number of single-level cells(SLC). An interface part(120) analyzes the characteristics of write data received from an application(110) or a file system(130). A flash transition layer(150) determines whether to write the write data in the multi-level cell or the single-level cell, by using the characteristics of the write data. The interface part is located on an equal layer where the application and the file system are formed.

    Abstract translation: 提供了根据数据特性将数据存储在单级单元或多级单元中的非易失性存储器系统，以通过选择在单级单元和单级单元之间存储数据的区域来提高系统的性能 多级单元根据数据的特点。 非易失性存储单元阵列（190）包括多个多电平单元（MLC）和多个单电平单元（SLC）。 接口部分（120）分析从应用（110）或文件系统（130）接收的写数据的特性。 闪存转移层（150）通过使用写入数据的特性来确定是否将写入数据写入多级单元或单级单元。 接口部分位于形成应用程序和文件系统的相等层上。

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