公开(公告)号：KR1020120098057A

公开(公告)日：2012-09-05

申请号：KR1020110017746

申请日：2011-02-28

Applicant: 삼성전자주식회사

Inventor： 배아현 ,  박수환 ,  후에키시메토모 ,  손상익 ,  이탁희

IPC: C23C18/16 ,  C23C18/52 ,  C23C18/18 ,  C25D5/34

CPC classification number: C23C18/1655 ,  C23C18/1651 ,  C23C18/36

Abstract: PURPOSE: A wet plating method is provided to eliminate hydrogen gas from the surface of a plated object, thereby minimizing pin holes on a plating layer of the object. CONSTITUTION: A wet plating method comprises the steps of: inserting an object(20) in a plating bath(10) filled with plating solution, plating the object first to form a plating layer(21) on the object, taking the object from the plating bath so that hydrogen gas generated from the plating layer of the object is eliminated by contacting the air, inserting the object into the plating bath again, and plating the object secondly.

Abstract translation: 目的：提供一种湿式电镀方法，以从电镀物体的表面除去氢气，从而使物体的镀层上的针孔最小化。 构成：湿法电镀方法包括以下步骤：将物体（20）插入填充有电镀液的电镀液（10）中，首先对物体进行电镀以在物体上形成镀层（21），从物体 电镀浴，使得从物体的镀层产生的氢气通过接触空气而消除，再次将物体插入电镀槽中，并且第二次镀覆该物体。