公开(公告)号：KR101974579B1

公开(公告)日：2019-08-26

申请号：KR1020120098486

申请日：2012-09-05

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 전상훈 ,  박종진 ,  뉘엔탄티엔 ,  배지현 ,  변경은 ,  이내응 ,  김도일 ,  트란쾅트룽

IPC: G01L9/06 ,  H01L29/84

公开(公告)号：KR1020140032093A

公开(公告)日：2014-03-14

申请号：KR1020120098486

申请日：2012-09-05

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 전상훈 ,  박종진 ,  뉘엔탄티엔 ,  배지현 ,  변경은 ,  이내응 ,  김도일 ,  트란쾅트룽

IPC: G01L9/06 ,  H01L29/84

CPC classification number: G01L1/16 ,  H01L29/84

Abstract: Disclosed are a pressure sensor and a method for sensing pressure. The disclosed pressure sensor includes: a substrate; a sensor thin film transistor formed on the substrate with a gate insulating layer in which the gate insulating layer includes an organic matrix where piezoelectric inorganic nanoparticles are dispersed; a power supplying source which applies an alternating current to the gate of the sensor thin film transistor; and a pressure sensing unit which senses pressure by obtaining a residual polarization value using a drain current detected from the sensor thin film transistor. [Reference numerals] (100) Pressure sensing unit; (70) Power unit

Abstract translation: 公开了一种用于感测压力的压力传感器和方法。 所公开的压力传感器包括：基板; 形成在基板上的传感器薄膜晶体管，栅极绝缘层，栅绝缘层包括其中分散有压电无机纳米颗粒的有机基体; 向所述传感器薄膜晶体管的栅极施加交流电的供电源; 以及压力感测单元，其通过使用从传感器薄膜晶体管检测到的漏极电流获得残留极化值来感测压力。 （附图标记）（100）压力感测单元; （70）动力单元