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公开(公告)号：KR101878735B1
公开(公告)日：2018-07-17
申请号：KR1020110076143
申请日：2011-07-29
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C01B31/02 , C23C16/26 , H01B1/04 , H01L21/335
Abstract: 그래핀의제조방법이제공되며, 균일한두께를가지고정공이동도가우수한그래핀을제조하는방법및 상기방법에의해얻어지는그래핀이제공된다.
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公开(公告)号：KR101788833B1
公开(公告)日：2017-10-20
申请号：KR1020100053032
申请日：2010-06-04
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
Abstract: 초소수성그라펜및 그의제조방법에관한것으로서, 상기초소수성그라펜은그 표면상에다양한돌기부가형성되어접촉각이증가되므로소수성이개선된다. 따라서새로운물질의부가없이간단한공정만으로그라펜자체에초소수성을부여하는것이가능해지므로전도성이요구되면서수분제어가필요한다양한분야에활용할수 있다.
Abstract translation: 本发明涉及一种超疏水石墨烯及其制备方法，其中疏水石墨烯在其表面上形成各种突起以增加接触角，从而改善疏水性。 因此，石墨烯本身可以通过简单的工艺赋予超疏水性而不添加新材料，因此它可以用于需要电导率控制和需要湿度控制的各个领域。
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公开(公告)号：KR1020120000338A
公开(公告)日：2012-01-02
申请号：KR1020100060659
申请日：2010-06-25
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: B82Y40/00 , B82Y30/00 , C01B32/182 , C01B32/186 , C01B32/194 , C01B2204/00 , C01B2204/02 , C01B2204/04 , H01L29/1606 , Y10T428/30
Abstract: PURPOSE: A method for controlling graphene layers is provided to obtain a single layered or dual layered graphene in a uniform structure by eliminating non-uniform structure such as grains. CONSTITUTION: A method for controlling graphene layers includes the following: A graphene is formed on one side of a first substrate. A second substrate is formed on another side of the first substrate. Light is irradiated to the graphene in order to induce Fresnel interference. Multilayered or non-uniform graphene on the graphene is eliminated through the Fresnel interference. The light is laser light. The first substrate is an organic substrate or a metal oxide substrate.
Abstract translation: 目的：提供一种控制石墨烯层的方法，通过消除诸如晶粒的不均匀结构，获得均匀结构的单层或双层石墨烯。 构成：用于控制石墨烯层的方法包括以下：在第一衬底的一侧上形成石墨烯。 第二基板形成在第一基板的另一侧上。 光照射到石墨烯上以引起菲涅尔干涉。 通过菲涅尔干涉消除石墨烯上的多层或不均匀的石墨烯。 光是激光。 第一衬底是有机衬底或金属氧化物衬底。
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公开(公告)号：KR1020130142794A
公开(公告)日：2013-12-30
申请号：KR1020120066320
申请日：2012-06-20
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: G01N21/17 , B82Y30/00 , B82Y40/00 , C01B32/182 , G01B11/24 , Y10T428/31678 , Y10T436/23 , G01N33/00 , C01B32/194 , G01N21/33
Abstract: Disclosed are a method for analyzing graphene and an analysis equipment. The method of the present invention comprises: a step of preparing a supporting part and a first graphene structure including graphene with grain and a grain boundary in at least one side of the supporting part; a step of forming a second graphene structure by oxidation-processing the first graphene structure; and a step of detecting the shape of the graphene. . [Reference numerals] (AA,CC) Start;(BB) Oxidizing step;(S110) Preparing a first graphene structure;(S131) Supplying H_2 O;(S132) Radiating UV;(S133) Removing H_2 O from the surface of the graphene structure;(S150) Detecting the shape of graphene
Abstract translation: 公开了用于分析石墨烯和分析设备的方法。 本发明的方法包括：在支撑部分的至少一侧制备支撑部分和包括具有晶粒和晶界的石墨烯的第一石墨烯结构的步骤; 通过氧化处理所述第一石墨烯结构形成第二石墨烯结构的步骤; 以及检测石墨烯的形状的步骤。 。 （参考号）（AA，CC）开始;（BB）氧化步骤;（S110）准备第一石墨烯结构;（S131）供给H_2O;（S132）辐射UV;（S133）从 石墨烯结构;（S150）检测石墨烯的形状
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公开(公告)号：KR1020110133452A
公开(公告)日：2011-12-12
申请号：KR1020110054152
申请日：2011-06-03
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B31/0484 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/194 , C01B2204/06 , H01L29/66742 , H01L29/78684 , H01L51/0016 , H01M4/1393 , H01M4/8817 , H01M4/8867 , H01M8/0202 , H01M10/052 , Y02P70/56 , Y10T428/24479
Abstract: PURPOSE: A method for manufacturing a graphene nano-ribbon and the graphene nano-ribbon manufactured by the same are provided to cost effectively manufacture the graphene nano-ribbon without a high vacuum machine or an expensive machine. CONSTITUTION: A method for manufacturing a graphene nano-ribbon includes the following: A sheet-shaped graphene is formed on at least one side of a substrate. A plasma mask with nano-patterns is formed on the graphene. The nano-patterns are formed on the graphene by implementing a plasma treating process with respect to the stacked body with the plasma mask. The plasma mask forming process includes an amorphous carbon stacking process and a nano-pattern forming process with respect to amorphous carbon. After the nano-patterns are formed on the graphene, the plasma mask is eliminated.
Abstract translation: 目的：提供一种制造石墨烯纳米带的方法和由其制造的石墨烯纳米带，以便在没有高真空机或昂贵的机器的情况下成本有效地制造石墨烯纳米带。 构成：用于制造石墨烯纳米带的方法包括以下：片状石墨烯形成在基板的至少一侧上。 在石墨烯上形成具有纳米图案的等离子体掩模。 通过使用等离子体掩模实现相对于层叠体的等离子体处理工艺，在石墨烯上形成纳米图案。 等离子体掩模形成工艺包括无定形碳堆叠工艺和相对于无定形碳的纳米图案形成工艺。 在石墨烯上形成纳米图案之后，等离子体掩模被消除。
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Patent Agency Ranking
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公开(公告)号：KR101920721B1
公开(公告)日：2018-11-22
申请号：KR1020110054152
申请日：2011-06-03
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/194 , C01B2204/06 , H01L29/66742 , H01L29/78684 , H01L51/0016 , H01M4/1393 , H01M4/8817 , H01M4/8867 , H01M8/0202 , H01M10/052 , Y02P70/56 , Y10T428/24479
Abstract: 그라펜나노리본의제조방법및 상기제조방법에의해얻어진그라펜나노리본이형성되며, 상기제조방법은완화된조건에서경제적인방법으로형성할수 있다. 상기그라펜나노리본은투명전극이나메모리, 트랜지스터, 센서등의다양한전기소자에적용될수 있다.
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公开(公告)号：KR101603766B1
公开(公告)日：2016-03-15
申请号：KR1020090109796
申请日：2009-11-13
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B31/0446 , B32B7/06 , B32B7/12 , B32B15/08 , B32B27/28 , B32B27/32 , B32B27/36 , B32B27/40 , B32B38/10 , C01B32/184 , C23C16/26 , C23C16/44 , G09F3/10 , H01L21/683 , Y10T428/24612 , Y10T428/26 , Y10T428/30 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31678 , Y10T428/31855 , Y10T428/31971
Abstract: 그라펜적층체및 그의제조방법에관한것으로, 상기그라펜적층체는기판과의단단한결합이가능하며, 전사과정에서흠결이최소화시킬수 있는제조방법에관한것이다. 상기그라펜적층체는기판/바인더층/그라펜의구조를갖는다.
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公开(公告)号：KR1020130014182A
公开(公告)日：2013-02-07
申请号：KR1020110076143
申请日：2011-07-29
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C01B31/02 , C23C16/26 , H01B1/04 , H01L21/335
CPC classification number: C01B32/186 , C23C16/26 , H01B1/04
Abstract: PURPOSE: A manufacturing method of graphene is provided to prevent problems in degree of task difficulty due to blocking of a work place by inserting a mesh which has a smaller wire netting than a fluidized bed microbial carrier into a fluidized bed biofilter cask by putting around perimeter of a corporate body. CONSTITUTION: A manufacturing method of graphene comprises the following steps. A mesh(4) with a wire netting smaller than a fluidized bed microbial carrier is inserted into a fluidized bed biofilter cask by wrapping around the perimeter of a combination. The combination comprises a partition and three or more of steel materials(2). The partition(1) is arranged with punched holes which are perpendicular to the height of the fluidized bed biofilter with constant interval of each shift height of the fluidized bed biofilter. The steel materials have the length of the same height of the fluidized bed biofilter which are arranged with constant interval near to edge of partition, and the width of 1-5% of the height.
Abstract translation: 目的：提供石墨烯的制造方法，以通过将具有比流化床微生物载体更小的丝网的网格通过围绕周边插入流化床生物过滤器桶中来防止由于工作场所堵塞而造成的任务困难程度的问题 的组织机构。 构成：石墨烯的制造方法包括如下步骤。 将具有小于流化床微生物载体的网网的网（4）通过缠绕在组合的周边而插入到流化床生物过滤器桶中。 该组合包括隔板和三种或更多种钢材料（2）。 分隔件（1）布置有与流化床生物过滤器的高度垂直的冲孔，其具有流化床生物过滤器的每个移位高度的恒定间隔。 钢材的长度与流动床生物过滤器的高度相同，间隔距离靠近分隔边缘，宽度为1-5％的高度。
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公开(公告)号：KR1020110133354A
公开(公告)日：2011-12-12
申请号：KR1020100053032
申请日：2010-06-04
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B32/182 , B05D5/086 , C01B32/194 , H01B1/04
Abstract: PURPOSE: Ultra-hydrophobic graphene and a method for manufacturing the same are provided to improve the conductivity of graphene and to improve the contact angle of the graphene with respect to water by forming a plurality of protruding parts to the graphene. CONSTITUTION: Ultra-hydrophobic graphene includes a plurality of protruding parts. The protruding parts are formed into one shape of a hemi spherical shape, a cylinder shape, a prism shape, or a pyramid shape. The protruding parts occupy about 20 to 80% of the entire surface area of the graphene. The average height of the protruding parts is between about 1um and about 10mm. The average diameter of the protruding parts is between about 0.1um and about 1000um. The intervals of the protruding parts are between about 0.1um and about 1000um. The contact of the graphene with respect to water is between about 90 degrees and about 170 degrees.
Abstract translation: 目的：提供超疏水性石墨烯及其制造方法以提高石墨烯的导电性，并通过向石墨烯形成多个突出部分来改善石墨烯相对于水的接触角。 构成：超疏水石墨烯包括多个突出部分。 突出部分形成为半球形，圆柱形，棱柱形或棱锥形的一种形状。 突出部分占石墨烯整个表面积的约20％至80％。 突出部分的平均高度在约1um至约10mm之间。 突出部分的平均直径为约0.1um至约1000um。 突出部分的间隔在约0.1um至约1000um之间。 石墨烯相对于水的接触在约90度至约170度之间。
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