Abstract:
본원은 제올라이트 내에 양자점(Quantum Dots, QDs) 또는 양자선(Quantum Wire)을 분산시키는 방법, 상기 방법에 의하여 분산된 양자점 또는 양자선을 함유하는 제올라이트, 및 제올라이트 내에 양자점 또는 양자선을 안정화시키는 방법에 관한 것이다.
Abstract:
PURPOSE: A method for dispersing and stabilizing quantum dots or quantum wires in zeolite and quantum dot-containing or quantum wire-containing zeolite based on the method are provided to uniformly disperse quantum dots or quantum wires in the cage of the zeolite. CONSTITUTION: Zeolite containing quantum dots or quantum wires is treated with basic gas. The quantum dots or the quantum wires are uniformly dispersed in the pores of the zeolite. The quantum dots or the quantum wires are based on metals, oxides, or compound semiconductors. The compound semiconductors are selected from a group including CdS, CdO, CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe, MnS, MnO, MnSe, MnTe, MgO, MgS, MgSe, MgTe, CaO, CaS, CaSe, CaTe, SrO, SrS, SrSe, SrTe, BaO, BaS, BaSe, BaTE, HgO, HgS, HgSe, HgTe, Al_2O_3, Al_2S_3, Al_2Se_3, Al_2Te_3, Ga_2O_3, Ga_2S_3, Ga_2Se_3, Ga_2Te_3, In_2O_4, In_2S_3, In_2Se_3, In_2Te_3, SiO_2, GeO_2, SnO_2, SnS, SnSe, SnTe, PbO, PbO2, PbS, PbSe, PbTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, BP, Si, Ge, or the combination of the same.
Abstract:
본원은 제올라이트 내에 양자점(Quantum Dots, QDs) 또는 양자선(Quantum Wire)을 분산시키는 방법, 상기 방법에 의하여 분산된 양자점 또는 양자선을 함유하는 제올라이트, 및 제올라이트 내에 양자점 또는 양자선을 안정화시키는 방법에 관한 것이다.
Abstract:
PURPOSE: A manufacturing method of a high quality titanium - silicon containing molecular sieve is provided to offer excellent quality of a titanate quantum wire included in the titanium - silicon containing molecular sieve, and to offer economical efficiency with rapid speed. CONSTITUTION: A manufacturing method of a high quality titanium - silicon containing molecular sieve includes a step for manufacturing a reaction mixture including a silicon source, a titanium source, an alkaline source, salt and water, and obtaining the titanium - silicon containing molecular sieve by performing hydrothermal reaction on the reaction mixture with heat.
Abstract:
A method for manufacturing a composite of substrate-molecular sieve is provided to combine crystals of a molecular sieve with the surface of a substrate by chemical bonding, ionic bonding, or hydrogen bonding without a solvent, a reactor, and other devices and to secure good adhesion speed, density, and adhesion strength of a composite of substrate-molecular sieve. A method for manufacturing a composite of substrate-molecular sieve includes a step for forming chemical bonding between a substrate and a molecular sieve crystal by physically applying pressure to the molecular sieve crystal against the substrate. A molecular sieve is zeolite, zeolite with MFI(Melt Flow Indexer) structure, zeolite with MEL structure, zeolite A, X, Y, and L, beta, mordenite, ferrierite, ETS-4 or ETS-10, mesoporous silica, organic-inorganic composite mesoporous structure or layered materials, organic zeolite forming regular nanopores by three-dimensionally combining metallic ion and ligand, organic metal zeolite, or coordination compound zeolite.
Abstract:
본 발명은 (a) 규소원(Si source), 티타늄원(Ti source), 염기원(base), 알칼리성원(source of alkalinity) 및 물을 포함하는 반응 혼합물을 제조하는 단계; 및 (b) 상기 반응 혼합물에 열을 가하여 수열반응 시켜 티타늄-실리콘함유 분자체를 수득하는 단계를 포함하는 티타늄-실리콘함유 분자체의 제조방법, 그리고 고품질 티타늄-실리콘함유 분자체에 관한 것이다. 본 발명의 방법에 따르면, 매우 신속하면서도 경제적으로 티타늄-실리콘함유 분자체, 특히 ETS-10을 제조할 수 있다. 본 발명에 의해 제조된 티타늄-실리콘함유 분자체는 크기가 완벽히 균일하면서도 표면이 매끄러운 특징을 갖는다. 본 발명의 티타늄-실리콘함유 분자체에서 티타네이트 양자선의 질은 매우 우수하다. 티타늄-실리콘함유 분자체, ETS, 규소, 티타늄, 제올라이트, 분자체, 수열반응, 유기규소화합물, TEOS, TMOS, 티타네이트, 양자선