公开(公告)号：KR1020100016928A

公开(公告)日：2010-02-16

申请号：KR1020080076584

申请日：2008-08-05

Applicant: 서울대학교산학협력단

Inventor： 홍승훈 ,  고준태

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: H01B1/24 ,  H01B1/04

Abstract: PURPOSE: A method for manufacturing a graphene nanostructure solution is provided to create a uniform graphene nano structure solution using anisotropic etching by using oxide nano wire as a mask on multilayered graphene. CONSTITUTION: A method for manufacturing a graphene nanostructure comprises the steps of: adsorbing a target nano structure(20) on a multilayered graphene(10); performing anisotropic etching through anisotropic etching by using the adsorbed target nano structure as a mask to create a multilayered graphene nano structure; and dispersing the multilayered graphene nano structure in a dispersion solvent.

Abstract translation: 目的：提供一种制造石墨烯纳米结构溶液的方法，以通过在多层石墨烯上使用氧化物纳米线作为掩模，使用各向异性蚀刻产生均匀的石墨烯纳米结构溶液。 构成：用于制造石墨烯纳米结构的方法包括以下步骤：在多层石墨烯（10）上吸附目标纳米结构（20）; 通过使用吸附的目标纳米结构作为掩模，通过各向异性蚀刻进行各向异性蚀刻以产生多层石墨烯纳米结构; 并将多层石墨烯纳米结构分散在分散溶剂中。