公开(公告)号：KR1020100013577A

公开(公告)日：2010-02-10

申请号：KR1020080075162

申请日：2008-07-31

Applicant: 서울대학교산학협력단

Inventor： 신채호 ,  전인수 ,  김정구

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: B81C1/00031 ,  G03F7/0002 ,  Y10T428/249953

Abstract: PURPOSE: A removal of the bulge effect in the nano patterning is provided to offer nanostructures without a bulge around a nano pattern by allowing predetermined solvent treatment and outside stimulus. CONSTITUTION: A manufacturing method of the nanostructures without a bulge around a nano pattern comprises: forming the nano pattern around the surface of a polymer(S1); contacting the surface of the polymer with nano pattern to a predetermined solvent(S2); and removing the bulge around the nano pattern which is formed from the pattern manufacturing process by allowing the outside stimulus to the surface of the polymer which contacted with the solvent(S3). The nano pattern is formed from a mechanical power.

Abstract translation: 目的：通过允许预定的溶剂处理和外部刺激，提供在纳米图案化中去除凸起效应以提供纳米结构，而不会在纳米图案周围发生凸起。 构成：在纳米图案周围没有凸起的纳米结构的制造方法包括：在聚合物表面周围形成纳米图案（S1）; 将聚合物的表面与纳米图案接触到预定溶剂（S2）; 并且通过允许外部刺激到与溶剂接触的聚合物的表面（S3），去除由图案制造过程形成的纳米图案周围的凸起。 纳米图案由机械功率形成。