콜로이드 반도체 나노입자의 다층 박막 형성법
    1.
    发明公开
    콜로이드 반도체 나노입자의 다층 박막 형성법 无效
    多层膜半导体纳米粒子的制备

    公开(公告)号:KR1020120106426A

    公开(公告)日:2012-09-26

    申请号:KR1020110024530

    申请日:2011-03-18

    CPC classification number: H01L21/0274 G03F7/0002

    Abstract: PURPOSE: A method for forming multilayer thin firm of a colloid semiconductor nanoparticle is provided to laminate a semiconductor nanoparticle by reforming the surface of the semiconductor nanoparticle. CONSTITUTION: Nano particles(11) in which the surface is reformed are formed in a stamp(10). The nano particles formed in the stamp contact an element and gravitation between the nano particles is strengthened. A thin film is transferred. The nano particles are one or more species selected from a group consisting of a metal oxide or an II-VI group material, an III-V group material, an IV-IV group material, and an IV-VI group material.

    Abstract translation: 目的:提供一种用于形成胶体半导体纳米颗粒的多层薄固体的方法,通过重整半导体纳米颗粒的表面来层压半导体纳米颗粒。 构成:将表面重整的纳米颗粒(11)形成在印模(10)中。 形成在印模中的纳米颗粒与元素之间的接触和纳米颗粒之间的重力被加强。 转移薄膜。 纳米颗粒是选自金属氧化物或II-VI族材料,III-V族材料,IV-IV族材料和IV-VI族材料的一种或多种。

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