公开(公告)号：KR100964062B1

公开(公告)日：2010-06-16

申请号：KR1020090083175

申请日：2009-09-03

Applicant: 서울대학교산학협력단

Inventor： 안성훈 ,  천두만 ,  김민생 ,  여준철

IPC: H01L21/20 ,  H01L21/302

CPC classification number: H01L21/67069 ,  H01L21/02263 ,  H01L21/3065 ,  H01L21/68785

Abstract: PURPOSE: A deposition and a substrate etching apparatus and a method using powder are provided to perform deposition and etching of a substrate by enabling a metal power to collide a substrate to the substrate through a high pressure transfer gas. CONSTITUTION: A vacuum pump(20) makes the inside of a chamber(10) vacuum. A filter(80) collects a particle which passes through a deposition and etching process. A substrate support unit(30) supports a substrate. An injection nozzle(40) sprays a predetermined volume of powder on the substrate. The gas inlet(50) receives predetermined gas and a powder supply unit supplies the powder to a gas pipe.

Abstract translation: 目的：提供沉积和基板蚀刻装置和使用粉末的方法，以通过使金属功率通过高压转移气体将基板与基板碰撞来执行基板的沉积和蚀刻。 构成：真空泵（20）使室（10）的内部真空。 过滤器（80）收集通过沉积和蚀刻工艺的颗粒。 基板支撑单元（30）支撑基板。 注射喷嘴（40）在衬底上喷射预定体积的粉末。 气体入口（50）接收预定的气体，粉末供应单元将粉末供应到气体管道。