公开(公告)号：KR1020140100692A

公开(公告)日：2014-08-18

申请号：KR1020130013718

申请日：2013-02-07

Applicant: 서울대학교산학협력단

Inventor： 한상길 ,  서광석

IPC: H01L21/336 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L21/263 ,  H01L21/31111

Abstract: The present invention relates to a method to manufacture an AlGaN/GaN high electron mobility transistor (HEMT) element. The method is comprised by including a step of preparing a substrate in which an AlGaN wall layer and GaN cap layer are epitaxially grown on a GaN buffer; a step of forming a MESA structure to electrically insulate between elements by selectively removing the AlGaN wall layer and the GaN cap layer; a step of forming SiN_X on the substrate of the MESA structure; a step of selectively removing the SiN_X in an area in which a source/drain electrode is formed and forming the source/drain electrode in the area; a step of removing the SiN_X in a part in which a gate electrode and processing the substrate with nitrogen plasma to ease a current collapse phenomenon; and a step of forming the gate electrode by depositing and patterning a metal layer on the substrate.

Abstract translation: 本发明涉及一种制造AlGaN / GaN高电子迁移率晶体管（HEMT）元件的方法。 该方法包括制备其中在GaN缓冲层上外延生长AlGaN壁层和GaN覆盖层的衬底的步骤; 通过选择性地去除AlGaN壁层和GaN覆盖层，形成MESA结构以使元件之间电绝缘的步骤; 在MESA结构的衬底上形成SiN_X的步骤; 在其中形成源极/漏极的区域中选择性地去除SiN_X并在该区域中形成源极/漏极的步骤; 在其中栅极电极和用氮等离子体处理衬底的部分中去除SiN_X以减轻电流崩溃现象的步骤; 以及通过在基板上沉积和图案化金属层来形成栅电极的步骤。