公开(公告)号：KR101218925B1

公开(公告)日：2013-01-21

申请号：KR1020110078853

申请日：2011-08-09

Applicant: 성균관대학교산학협력단

Inventor： 박종윤 ,  송우석 ,  김수연

IPC: C01B31/02 ,  B82B3/00 ,  H01L21/335 ,  B82Y40/00

CPC classification number: C01B32/184 ,  B82B3/0038 ,  B82Y40/00 ,  C01B2204/06 ,  C23C16/26

Abstract: PURPOSE: A graphene nanoribbon forming method and a transistor manufacturing method using the same are provided to easily adjust the width of graphene nanoribbon by determining the width of a graphene thin film depending on the width of a phenanthrene thin film. CONSTITUTION: A graphene nanoribbon forming method includes the following steps: a thin film is formed on a substrate(S110); and the substrate is heated by supplying carbon supplying gas in order to form a graphene thin film on a phenanthrene thin film which is formed by a focused ion-beam process(S120). The carbon supplying gas is at least one selected from a group including carbon compounds composed of carbon monoxide, methane, ethane, ethylene, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene, and toluene. [Reference numerals] (AA) Start; (BB) End; (S110) Forming a phenanthrene thin film on a substrate using a focused ion-beam process; (S121) Heating the substrate under hydrogen atmosphere; (S123) Forming a graphene thin film by supplying inert gas and carbon supplying gas on the substrate

Abstract translation: 目的：提供石墨烯纳米带形成方法和使用其的晶体管制造方法，以通过根据菲薄膜的宽度确定石墨烯薄膜的宽度来容易地调节石墨烯纳米薄片的宽度。 构成：石墨烯纳米带形成方法包括以下步骤：在基板上形成薄膜（S110）; 通过供给碳供应气体来加热基板，以便通过聚焦离子束法形成的菲薄膜上形成石墨烯薄膜（S120）。 碳供应气体是选自由一氧化碳，甲烷，乙烷，乙烯，乙醇，乙炔，丙烷，丙烯，丁烷，丁二烯，戊烷，戊烯，环戊二烯，己烷，环己烷，苯， 和甲苯。 （附图标记）（AA）开始; （BB）结束; （S110）使用聚焦离子束工艺在基板上形成菲薄膜; （S121）在氢气氛下加热基板; （S123）通过在基板上供给惰性气体和碳供给气体来形成石墨烯薄膜