公开(公告)号：KR101433857B1

公开(公告)日：2014-08-26

申请号：KR1020130079125

申请日：2013-07-05

Applicant: 연세대학교 산학협력단

Inventor： 김현재 ,  권정무

IPC: H01L21/316 ,  H01L29/786

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L21/324 ,  H01L29/66742

Abstract: The present invention relates to a method of forming an oxide thin film and a method of manufacturing an oxide thin film using hydrogen peroxide. The method of forming an oxide thin film according to an embodiment comprises a step of mixing hydrogen peroxide in a precursor solution that a precursor material is dissolved in a solvent; a step of spreading the precursor solution with the hydrogen peroxide mixed on a substrate within a predetermined time after mixing the hydrogen peroxide; a step of thermally processing the substrate at a first temperature; and a step of thermally processing the substrate at a second temperature.

Abstract translation: 本发明涉及形成氧化物薄膜的方法和使用过氧化氢制造氧化物薄膜的方法。 根据一个实施方案的形成氧化物薄膜的方法包括将前体材料溶解在溶剂中的前体溶液中混合过氧化氢的步骤; 在混合过氧化氢之后的预定时间内，将过氧化氢混合在基材上的步骤; 在第一温度下热处理所述基板的步骤; 以及在第二温度下热处理所述基板的步骤。