公开(公告)号：KR101978577B1

公开(公告)日：2019-05-14

申请号：KR1020170168311

申请日：2017-12-08

Applicant: 인하대학교 산학협력단

Inventor： 김상현 ,  김은진 ,  이재근 ,  박민정 ,  조은희 ,  정성훈

IPC: E04D13/10

公开(公告)号：KR1020090114489A

公开(公告)日：2009-11-04

申请号：KR1020080040149

申请日：2008-04-30

Applicant: 인하대학교 산학협력단

Inventor： 원태영 ,  박순열 ,  오혜근 ,  김은진

IPC: H01L21/02 ,  H01L21/265

Abstract: PURPOSE: An algorithm of ion implant technique of Monte Carle using empirical data is provided to use each profile as existing data though the ion implantation is successively performed. CONSTITUTION: The simulation is performed using the Monte Carle algorithm on the nano-scale semiconductor ion injection process. The existing database is searched and read. Each simulation result is especially made into a database by parameter. Accordingly, the simulation which uses the existing data as each profile limits the processing condition that doesn't exist in the database.

Abstract translation: 目的：提供使用经验数据的Monte Carle离子注入技术的算法，通过连续执行离子注入，使用每个曲线作为现有数据。 构成：使用蒙特卡勒算法在纳米级半导体离子注入工艺上进行模拟。 搜索和读取现有的数据库。 每个模拟结果通过参数特别成为一个数据库。 因此，使用现有数据作为每个配置文件的模拟限制了数据库中不存在的处理条件。