公开(公告)号：KR1020080074246A

公开(公告)日：2008-08-13

申请号：KR1020070012984

申请日：2007-02-08

Applicant: 인하대학교 산학협력단

Inventor： 오혜근 ,  장욱 ,  원태영 ,  신우정

IPC: H01L21/027

CPC classification number: H01L21/0274

Abstract: A lithography process for forming a specific pattern is provided to form a desired pattern by controlling properly a stacked structure of semiconductors. A lithography process is performed to form a desired shape of pattern on a wafer(1) in a semiconductor manufacturing process. A first and second semiconductors(2,3) are stacked in a vertical direction. The desired shape of pattern is easily obtained by applying different etch processes according to optical contrast characteristics of each semiconductor. The first and second semiconductors are formed by controlling properly etch ratios according to refractive indexes and diffractive indexes. The first and second semiconductors have different optical contrasts or similar optical contrasts.

Abstract translation: 提供用于形成特定图案的光刻工艺以通过适当地控制半导体的堆叠结构形成期望的图案。 在半导体制造工艺中进行光刻工艺以在晶片（1）上形成期望的图案形状。 第一和第二半导体（2,3）在垂直方向上堆叠。 通过根据每个半导体的光学对比特性应用不同的蚀刻工艺，可以容易地获得期望的图案形状。 第一和第二半导体通过根据折射率和衍射指数控制合适的蚀刻比例来形成。 第一和第二半导体具有不同的光学对比度或类似的光学对比度。