公开(公告)号：KR100824065B1

公开(公告)日：2008-05-07

申请号：KR1020070018186

申请日：2007-02-23

Applicant: 재단법인서울대학교산학협력재단

Inventor： 이창희 ,  박경민 ,  곽정훈

IPC: H01L29/786 ,  B82Y30/00

CPC classification number: H01L51/0566 ,  B82Y30/00

Abstract: A photosensitive organic thin film transistor is provided to decrease an on-state current of a transistor according to light intensity by forming an activation layer in two layers. A photosensitive organic thin film transistor includes a substrate(100), a gate electrode(200), a gate insulation material(300), an n-type organic semiconductor film(410), a p-type organic semiconductor film(420), and source and drain electrodes(500,600). The gate electrode is formed on a predetermined region on the substrate. The gate insulation material is formed on the gate electrode. The n-type organic semiconductor film is formed on the gate insulation material. The p-type organic semiconductor film is formed on the n-type organic semiconductor film. The source and drain electrodes are formed on the p-type organic semiconductor film.

Abstract translation: 提供光敏有机薄膜晶体管，通过以两层形成激活层，根据光强度降低晶体管的通态电流。 光敏有机薄膜晶体管包括基板（100），栅电极（200），栅绝缘材料（300），n型有机半导体膜（410），p型有机半导体膜（420） 和源极和漏极（500,600）。 栅电极形成在基板上的预定区域上。 栅极绝缘材料形成在栅电极上。 n型有机半导体膜形成在栅绝缘材料上。 p型有机半导体膜形成在n型有机半导体膜上。 源极和漏极形成在p型有机半导体膜上。