公开(公告)号：KR1020080064259A

公开(公告)日：2008-07-09

申请号：KR1020070000964

申请日：2007-01-04

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황철성 ,  박태주

IPC: H01L21/203

CPC classification number: C23C16/45527

Abstract: A thin film deposition method comprising an improved metal precursor feeding and a purging step is provided to reduce the time required for obtaining a thin film with a desired thickness by improving a deposition speed in a short process time. A thin film deposition method comprising an improved metal precursor feeding and a purging step includes the steps of: subsequently and repeatedly performing the step of providing the metal precursor and the purging step(S1) two times; and providing and purging a reaction gas in order to divide the metal precursor(S2). A total time required for performing the step of providing the metal precursor is the same as that required for providing the metal precursor of the corresponding steps of providing and purging the metal precursor, and a total time required for performing the step of purging the metal precursor is the same as that required for purging the metal precursor of the corresponding steps of providing and purging the metal precursor.

Abstract translation: 提供了包括改进的金属前体进料和清洗步骤的薄膜沉积方法，以通过在短的处理时间内提高沉积速度来减少获得具有所需厚度的薄膜所需的时间。 包括改进的金属前体进料和清洗步骤的薄膜沉积方法包括以下步骤：随后并重复地进行提供金属前体和清洗步骤（S1）两次的步骤; 并提供并吹扫反应气体以分割金属前体（S2）。 进行提供金属前体的步骤所需的总时间与为金属前体提供提供和清洗金属前体的相应步骤所需的总时间相同，并且执行清洗金属前体步骤所需的总时间 与提供和清洗金属前体的相应步骤的金属前体的吹扫所需的相同。