公开(公告)号：KR100754327B1

公开(公告)日：2007-08-31

申请号：KR1020060019991

申请日：2006-03-02

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황기웅 ,  오훈

IPC: H01J11/44

Abstract: An anti-reflective item for a display device having a sub-wavelength-structure on a surface thereof by plasma etch and a manufacturing method of the same are provided to obtain high productivity by reducing a manufacturing cost without using an expensive anti-reflective coating material. A loading process is performed to load a film or a sheet formed of a polymer material into a reactor(S110). An implanting process is performed to implant etch gas by exhausting air from the reactor(S120). A plasma forming process is performed to form plasma by ionizing the etch gas(S130). A fine surface structure forming process is performed to form a plurality of fine surface structures having a scale of a sub-wavelength-structure by etching locally the film or the sheet of the polymer material in a non-uniform etch manner using the plasma(S140). The fine surface structure has a lower width and a depth which are more than a half-wavelength of a visible ray and less than a wavelength of the visible ray.

Abstract translation: 通过等离子体蚀刻在其表面上具有亚波长结构的显示装置的抗反射物品及其制造方法被提供以通过降低制造成本而获得高生产率而不使用昂贵的抗反射涂层材料 。 执行加载过程以将由聚合物材料形成的膜或片加载到反应器中（S110）。 执行注入工艺以通过从反应器排出空气来注入蚀刻气体（S120）。 通过电离蚀刻气体来执行等离子体形成过程以形成等离子体（S130）。 执行精细表面结构形成工艺以通过使用等离子体以非均匀蚀刻方式局部蚀刻膜或聚合物材料片来形成具有亚波长结构的尺度的多个精细表面结构（S140 ）。 精细表面结构具有比可见光的半波长大且小于可见光的波长的更低的宽度和深度。