公开(公告)号：KR1020080104253A

公开(公告)日：2008-12-02

申请号：KR1020080116395

申请日：2008-11-21

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황철성 ,  이현주

IPC: H01L27/105 ,  H01L21/8242

CPC classification number: H01L21/022 ,  H01L21/02175 ,  H01L21/02197 ,  H01L28/56

Abstract: The semiconductor capacitor including ferroelectric, and the manufacturing method thereof and ferroelectric and MEMS device are provided to reduce the thickness of the dielectric film of capacitor. The capacitor(150) is formed with the bottom electrode(120), and the dielectric film(130) and upper electrode(140) at the upper part of the semiconductor substrate(100). The ferroelectric film(135) and paraelectric layer(137) are formed with the thickness in which the remnant polarization(remnant polarization) and coercive field of ferroelectric becomes higher than the remnant polarization and coercive field of the ferroelectric film. The thickness of the paraelectric layer is thinner than the thickness of the ferroelectric film.

Abstract translation: 提供包括铁电的半导体电容器及其制造方法以及铁电和MEMS器件以减小电容器的电介质膜的厚度。 电容器（150）由半导体衬底（100）的上部形成有底部电极（120）和电介质膜（130）和上部电极（140）。 形成强电介质膜（135）和顺电层（137），其中铁电体的剩余极化（残余极化）和矫顽磁场的厚度变得高于铁电体膜的剩余极化和矫顽场。 顺电层的厚度比铁电体膜的厚度薄。

公开(公告)号：KR100890609B1

公开(公告)日：2009-03-27

申请号：KR1020060079717

申请日：2006-08-23

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황철성 ,  이현주

IPC: H01L27/105

CPC classification number: H01L21/02197 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L28/55

Abstract: 유전체막, 그 제조방법, 및 그 유전체막을 포함하는 반도체 캐패시터를 개시한다. 개시된 반도체 캐패시터는, 하부 전극, 상기 하부 전극 상부에 형성되는 강유전체막, 상기 강유전체막 표면에 형성되는 상유전체막, 및 상기 상유전체막 상부에 형성되는 상부 전극을 포함한다.
강유전체막, 상유전체막, 잔류 분극, 항전압

公开(公告)号：KR1020080017904A

公开(公告)日：2008-02-27

申请号：KR1020060079717

申请日：2006-08-23

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황철성 ,  이현주

IPC: H01L27/105

CPC classification number: H01L21/02197 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L28/55

Abstract: A dielectric film, a manufacturing method thereof and a semiconductor capacitor having the same are provided to obtain large capacitance by using a stacked structure of a ferroelectric layer and a paraelectric layer as the dielectric film of the semiconductor capacitor. A semiconductor capacitor(150) includes a bottom electrode(120), a dielectric film(130), and a top electrode(140), which are sequentially disposed on a semiconductor substrate(100). A transistor and an insulator are interposed between the semiconductor substrate and the lower electrode. An insulator is provided for electrically insulating the transistor from the semiconductor capacitor. An adhesive layer(110) is interposed between the insulator and the lower electrode to increase adhesion between the insulator and the semiconductor capacitor. A dielectric film(130) has a stacked structure of a ferroelectric layer(135) and a paraelectric layer(137) which are sequentially stacked on the lower electrode 120.

Abstract translation: 提供介电膜，其制造方法和具有该电介质的半导体电容器以通过使用铁电层和顺电层的叠层结构作为半导体电容器的电介质膜来获得大的电容。 半导体电容器（150）包括依次设置在半导体衬底（100）上的底电极（120），电介质膜（130）和顶电极（140）。 晶体管和绝缘体插入在半导体衬底和下电极之间。 提供了一种绝缘体，用于将晶体管与半导体电容器电绝缘。 在绝缘体和下电极之间插入粘合剂层（110），以增加绝缘体和半导体电容器之间的粘附性。 电介质膜（130）具有依次堆叠在下电极120上的铁电层（135）和顺电层（137）的层叠结构。