公开(公告)号：KR100837577B1

公开(公告)日：2008-06-12

申请号：KR1020060137429

申请日：2006-12-29

Applicant: 재단법인서울대학교산학협력재단

Inventor： 박수영 ,  서장원 ,  임선정

IPC: G11B9/00 ,  C08J5/18 ,  B32B27/20 ,  C09K11/00

CPC classification number: G11B7/00455 ,  G11B7/0052 ,  G11B7/00552 ,  G11B7/245 ,  G11B2007/24624

Abstract: A rewritable fluorescence memory film, and a non-destructive writing/reading/erasing method using the same are provided to repeat data recording and erasing on a fluorescence memory film of polymer composite containing fluorescent material with high Stokes' shift and BTE photochromic compound. A rewritable fluorescence memory film is formed by applying coating material on a substrate, wherein the coating material contains 10 to 30wt.% composite of fluorescent material and photochromic compound and 90 to 70wt.% matrix polymer dissolved. The fluorescent material, which is excited-state intramolecular proton transfer compound, has a maximum absorption wavelength in a range of 410 to 430nm, a maximum fluorescence emission wavelength in a range of 450 to 700nm, and a difference between the maximum absorption wavelength and maximum fluorescence emission wavelength(Stokes' Shift) in a range of 20 to 290nm. The photochromic compound emits color under irradiation of ultraviolet rays having a wavelength of 400nm or less.

Abstract translation: 提供了可重写荧光存储器膜以及使用该可擦写荧光存储膜的非破坏性写入/读出/擦除方法，以在含有高斯托克斯位移和BTE光致变色化合物的含有荧光材料的聚合物复合物的荧光存储膜上重复数据记录和擦除。 通过在基材上涂覆涂料来形成可重写荧光记忆膜，其中涂料含有10至30重量％的荧光材料和光致变色化合物的复合物和溶解的90至70重量％的基质聚合物。 作为激发态分子内质子转移化合物的荧光材料具有410〜430nm的最大吸收波长，450〜700nm范围内的最大荧光发射波长，最大吸收波长与最大吸收波长的最大值 荧光发射波长（Stokes'Shift）在20到290nm的范围内。 光致变色化合物在波长为400nm以下的紫外线的照射下发色。