公开(公告)号：KR1020070104091A

公开(公告)日：2007-10-25

申请号：KR1020060036248

申请日：2006-04-21

Applicant: 재단법인서울대학교산학협력재단

Inventor： 윤의준 ,  박찬 ,  조욱 ,  김동혁 ,  전용선 ,  김희진

IPC: H01L33/12 ,  H01L33/26

Abstract: A method for forming III-nitride semiconductor layer and an apparatus using the same are provided to use single crystal SiO2 substrate instead of a conventional sapphire substrate and a silicon carbide substrate. A method for forming III-nitride semiconductor layer includes the steps of: a first step of forming a buffer layer(32) on a single crystal SiO2 substrate(31); and a second step of forming the III-nitride semiconductor layer(33) on the buffer layer. In at least one between the first and second steps, the single crystal SiO2 substrate serves a displacive phase transition. The single crystal SiO2 substrate is any one selected from a group consisting of an alpha quartz, a beta quartz, a low tridymite, a high tridymite, a low cristobalite, a high cristobalite or the like.

Abstract translation: 提供了用于形成III族氮化物半导体层的方法及其使用方法，以使用单晶SiO 2衬底代替常规蓝宝石衬底和碳化硅衬底。 一种形成III族氮化物半导体层的方法包括以下步骤：在单晶SiO 2衬底（31）上形成缓冲层（32）的第一步骤; 以及在缓冲层上形成III族氮化物半导体层（33）的第二步骤。 在第一和第二步骤中的至少一个中，单晶SiO 2衬底用于置换相变。 单晶SiO 2衬底是从由α石英，β石英，低鳞石英，高鳞石英，低方英石，高方英石等组成的组中选择的任意一种。