公开(公告)号：KR100686688B1

公开(公告)日：2007-02-27

申请号：KR1020050114187

申请日：2005-11-28

Applicant: 재단법인서울대학교산학협력재단

Inventor： 정재학 ,  최재호 ,  최강준 ,  이진욱 ,  황철성

IPC: H01L27/108

Abstract: A method for forming a ruthenium thin film is provided to enhance a step coverage and adherence thereof and minimize dependency of deposition characteristic due to variation of a base layer by forming a metal-halogen absorbing layer prior to formation of the ruthenium thin film. A semiconductor substrate is loaded in a reaction chamber(S1), and a metal-halogen compound absorbing layer is formed on the substrate(S2). A ruthenium thin film is formed on the absorbing layer(S3). The step of forming the absorbing layer includes supplying a metal-halogen compound into the reaction chamber to deposit the compound on the substrate, and discharging the residue of the metal-halogen compound from the reaction chamber. The step of forming the absorbing layer is repeated at least one time.

Abstract translation: 提供形成钌薄膜的方法以增强台阶覆盖率和其附着力，并且通过在形成钌薄膜之前形成金属卤素吸收层而使由于基底层的变化引起的沉积特性的依赖性最小化。 将半导体衬底装载到反应室（S1）中，并且在衬底上形成金属 - 卤素化合物吸收层（S2）。 在吸收层上形成钌薄膜（S3）。 形成吸收层的步骤包括将金属卤素化合物供应到反应室中以将化合物沉积在基板上，并且从反应室排出金属卤素化合物的残余物。 形成吸收层的步骤至少重复一次。