公开(公告)号：KR1020010084053A

公开(公告)日：2001-09-06

申请号：KR1020000008815

申请日：2000-02-23

Applicant: 정동근

Inventor： 정동근 ,  김이준

IPC: H01L27/115

Abstract: PURPOSE: A non-volatile semiconductor device and a manufacturing method thereof are provided to utilize MOS structure consisting of an insulating film made of substance which is prepared by an easy process and is made of stable material. CONSTITUTION: An insulating thin film(30) is formed on a silicon substrate(10) and consists of two kinds of atomic substances. An upper electrode(40) is formed on the insulating thin film(30). A lower electrode(50) is formed under the silicon substrate(10). The insulating thin film(30) is made of crystalline structure having preferred orientation different from that of the silicon substrate(10). When the lower electrode(50) is grounded and voltage changed from positive to negative is applied to the upper electrode(40), a hysteresis curve consisting a first sweeping and a second sweeping is represented and the hysteresis width of the hysteresis curve depends on the thickness of the insulating thin film(30).

Abstract translation: 目的：提供一种非挥发性半导体器件及其制造方法，以利用由易于制造并由稳定材料制成的由物质制成的绝缘膜组成的MOS结构。 构成：在硅衬底（10）上形成绝缘薄膜（30），由两种原子物质构成。 在绝缘薄膜（30）上形成上电极（40）。 下硅电极（50）形成在硅衬底（10）的下方。 绝缘薄膜（30）由具有与硅衬底（10）的取向不同的优选取向的晶体结构制成。 当下部电极（50）接地并且向上部电极（40）施加从正极变为负电压时，表示包括第一次扫掠和第二次扫描的滞后曲线，滞后曲线的滞后宽度取决于 绝缘薄膜（30）的厚度。