公开(公告)号：KR100414425B1

公开(公告)日：2004-01-13

申请号：KR1020010069901

申请日：2001-11-10

Applicant: 조성민

Inventor： 조성민 ,  김범준 ,  정세훈

IPC: H01L21/3065

Abstract: PURPOSE: An ion beam etching apparatus and method of a silicon and compound semiconductor are provided to prevent the damage of the semiconductor device by accurately controlling Ar ion beam. CONSTITUTION: The flow rate of Ar gas is controlled by an Ar gas valve(10). An Ar ion beam is generated from an ion beam generating part(20) having a driving connection with the Ar gas valve(10). The quantity of the Ar ion beam is exactly controlled by a shutter(30) for irradiating the predetermined quantity of the Ar ion beam onto a substrate. A shower ring(40) is formed in a vacuum chamber(90) for supplying etching gas controlled by an etching gas valve(50), wherein the etching gas valve(50) has a driving connection with the shower ring(40). A valve/shutter control computer(70) is connected with the Ar gas valve(10), the etching gas valve(50) and the shutter(30), so that the Ar and etching gas, and the Ar ion beam are controlled by the control computer through the Ar and etching gas valve, and the shutter. The vacuum state of the vacuum chamber(90) is conserved by a turbo pump(80) through cooling water.

Abstract translation: 目的：提供硅和化合物半导体的离子束蚀刻设备和方法，以通过精确地控制Ar离子束来防止半导体器件的损坏。 构成：Ar气的流量由Ar气阀（10）控制。 Ar离子束由与Ar气体阀（10）驱动连接的离子束产生部分（20）产生。 Ar离子束的量由用于将预定量的Ar离子束照射到衬底上的快门（30）精确控制。 一个喷淋环（40）形成在一个真空室（90）内，用于提供由一个蚀刻气体阀（50）控制的蚀刻气体，其中蚀刻气体阀（50）与喷淋环（40）具有驱动连接。 阀门/快门控制计算机（70）与氩气阀（10），蚀刻气体阀（50）和闸门（30）连接，使得Ar和蚀刻气体以及Ar离子束受到 控制电脑通过氩气和蚀刻气阀，以及百叶窗。 真空室（90）的真空状态由涡轮泵（80）通过冷却水保存。

公开(公告)号：KR1020030039080A

公开(公告)日：2003-05-17

申请号：KR1020010069901

申请日：2001-11-10

Applicant: 조성민

Inventor： 조성민 ,  김범준 ,  정세훈

IPC: H01L21/3065

Abstract: PURPOSE: An ion beam etching apparatus and method of a silicon and compound semiconductor are provided to prevent the damage of the semiconductor device by accurately controlling Ar ion beam. CONSTITUTION: The flow rate of Ar gas is controlled by an Ar gas valve(10). An Ar ion beam is generated from an ion beam generating part(20) having a driving connection with the Ar gas valve(10). The quantity of the Ar ion beam is exactly controlled by a shutter(30) for irradiating the predetermined quantity of the Ar ion beam onto a substrate. A shower ring(40) is formed in a vacuum chamber(90) for supplying etching gas controlled by an etching gas valve(50), wherein the etching gas valve(50) has a driving connection with the shower ring(40). A valve/shutter control computer(70) is connected with the Ar gas valve(10), the etching gas valve(50) and the shutter(30), so that the Ar and etching gas, and the Ar ion beam are controlled by the control computer through the Ar and etching gas valve, and the shutter. The vacuum state of the vacuum chamber(90) is conserved by a turbo pump(80) through cooling water.

Abstract translation: 目的：提供一种硅和化合物半导体的离子束蚀刻装置和方法，以通过精确地控制Ar离子束来防止半导体器件的损坏。 构成：Ar气体的流量由Ar气阀（10）控制。 从具有与Ar气阀（10）的驱动连接的离子束产生部（20）产生Ar离子束。 Ar离子束的量由用于将预定量的Ar离子束照射到衬底上的快门（30）精确地控制。 在用于供给由蚀刻气体阀（50）控制的蚀刻气体的真空室（90）中形成有喷淋环（40），其中所述蚀刻气体阀（50）具有与所述淋浴环（40）的驱动连接。 阀/快门控制计算机（70）与Ar气阀（10），蚀刻气体阀（50）和闸门（30）连接，使得Ar和蚀刻气体以及Ar离子束由 控制电脑通过Ar和蚀刻气阀，以及快门。 真空室（90）的真空状态由涡轮泵（80）通过冷却水保存。