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公开(公告)号：KR100772320B1
公开(公告)日：2007-10-31
申请号：KR1020040106237
申请日：2004-12-15
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C25D3/46
Abstract: 본 발명은 은 박막 형성용 전기도금용액 및 그 용액을 이용한 은 박막 형성방법에 관한 것으로, 벤조트리아졸 유도체 및/또는 티오유레아 유도체를 첨가한 은 전기도금용액을 이용하여 은 박막을 형성하는 방법은 균열이나 틈과 같은 결함이 없는 균일한 은 박막을 형성하게 함으로써 고집적화 반도체 금속 배선 공정에 적합하게 활용할 수 있는 효과가 있다.
벤조트리아졸, 티오유레아, 은 박막, 전해도금, 첨가제-
公开(公告)号：KR100727213B1
公开(公告)日：2007-06-13
申请号：KR1020040106240
申请日：2004-12-15
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C25D3/38
Abstract: 본 발명은 반도체 구리배선을 위한 구리 전해도금 방법에 있어서, 폴리에틸렌글리콜(PEG), 염화나트륨(NaCl), N,N-디메틸 디티오카르바믹 산(3-설포프로필)에스테르(N,N-Dimethyl dithiocarbamic acid(3-sulfopropyl)ester)(DPS), 황산구리, 및 황산으로 이루어지는 구리 전해도금 용액을 사용하고, 여러 단계의 도금을 실시하여 초등각 전착(superconformal deposition)을 시킬 수 있는 구리 전해도금 방법에 관한 것이며, 반도체 배선에 결함이 없는 구리막을 제조할 수 있는 효과가 있다.
구리 전해도금, 반도체 배선, DPS, 구리 전착, 초등각 전착-
公开(公告)号：KR1020040080464A
公开(公告)日：2004-09-20
申请号：KR1020030015226
申请日：2003-03-11
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C23C18/42
CPC classification number: C23C18/1879 , C23C18/44
Abstract: PURPOSE: A surface activation method for silver electroless plating is provided to obtain a thin silver film used for wiring or seed layer for silver electroless plating by activating the surface of a plating object using gold (Au) as a catalyst, thereby preventing agglomeration of silver to be deposited on the surface of the plating object. CONSTITUTION: In a method for activating the surface of a plating object using a catalyst before performing silver (Ag) electroless plating, the surface activation method for silver electroless plating is characterized in that gold (Au) is used as the catalyst, wherein the surface of the plating object is reacted with a gold activation solution comprising 0.01 to 0.5 g/L of gold chloride and 0.1 to 10 ml/L of hydrofluoric acid in order to use gold as the catalyst.
Abstract translation: 目的：提供一种银化学镀的表面活化方法，以金（Au）作为催化剂使电镀物体的表面活化，从而防止银的聚集，从而获得用于银化学镀的布线或种子层的薄银膜 沉积在电镀物体的表面上。 构成：在进行银（Ag）无电解电镀之前，使用催化剂活化镀覆物的表面的方法中，银化学镀的表面活化法的特征在于，使用金（Au）作为催化剂，其中表面 的镀液与含有0.01〜0.5g / L氯化金和0.1〜10ml / L氢氟酸的金活化溶液反应，以使用金作为催化剂。
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公开(公告)号：KR1020040080463A
公开(公告)日：2004-09-20
申请号：KR1020030015225
申请日：2003-03-11
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: H01L21/288
Abstract: PURPOSE: A method for forming a metallic thin film on a high resistivity substrate using an electroplating method is provided to form easily a metallic thin film on the high resistivity substrate by using a surface activation method. CONSTITUTION: A preprocessing procedure is performed. The preprocessing procedure includes an etching process for removing oxides from a high resistivity substrate by using an etching solution and a surface activation process for activating a surface of the high resistivity substrate by using a metal activation solution. A metallic thin film is formed on an upper surface of the surface-activated substrate by using an electroplating solution. The etching solution is formed with HF solution.
Abstract translation: 目的：提供一种使用电镀方法在高电阻率基板上形成金属薄膜的方法，通过使用表面活化方法容易地在高电阻率基板上形成金属薄膜。 构成：执行预处理程序。 预处理方法包括通过使用蚀刻溶液从高电阻率基板去除氧化物的蚀刻工艺和通过使用金属活化溶液来激活高电阻率基板的表面的表面活化方法。 通过使用电镀液在表面活化基板的上表面上形成金属薄膜。 蚀刻溶液由HF溶液形成。
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公开(公告)号：KR100752504B1
公开(公告)日：2007-08-27
申请号：KR1020040106239
申请日：2004-12-15
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C23C18/16
Abstract: 본 발명은 무전해 도금을 이용하여 패턴 내 금속배선을 형성하는 방법에 관한 것으로, 1차 시드층 형성시 코발트 또는 포름알데히드를 환원제로 사용하여 구리 무전해 도금용액에서 얇고 균일한 시드층을 형성하는 단계와, 디시아옥탄디술폰산(4,5-dithiaoctane-1,8-disulfonic acid) 또는 멀캡토프로판술포네이트 (3-mercapto-1-propanesulfonate)를 첨가제로 사용하여 bottom-up filling 방식으로 패턴을 금속으로 채우는 단계를 포함하여 이루어지며, 본 발명에 의한 무전해 도금을 이용한 패턴 내 금속배선 형성방법은 금속 배선의 표면 거칠기를 감소시키고 막질을 향상시키며, 보이드(void)나 씸(seam)과 같은 결점이 없이 bottom-up filling 방식으로 채워 범프(bump)를 형성시킬 수 있는 효과가 있다.
무전해 도금, 디시아옥탄디술폰산(4,5-dithiaoctane-1,8-disulfonic acid), 멀캡토프로판술포네이트 (3-mercapto-1-propanesulfonate), SPS, MPSA, 보이드(void), 씸(seam), bottom-up filling, 범프(bump)-
Patent Agency Ranking
公开(公告)号：KR1020070059617A
公开(公告)日：2007-06-12
申请号：KR1020050118660
申请日：2005-12-07
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C25D3/00
Abstract: A Cu electrodeposition method which performs conformal deposition and manufactures a Cu thin film free of bumps at the same time by using a Cu electrodeposition solution comprising benzotriazole as a leveler is provided. In a Cu electrodeposition solution having a basic composition comprising copper sulfate, sulfuric acid, polyethylene glycol, sodium chloride, and bis(3-sulfopropyl)disulfide, the Cu electrodeposition solution comprises benzotriazole as a leveler. In a Cu electrodeposition method using a basic composition comprising copper sulfate, sulfuric acid, polyethylene glycol, sodium chloride, and bis(3-sulfopropyl)disulfide, the Cu electrodeposition method comprises performing post-electrodeposition, or pre- and post-electrodeposition using benzotriazole as a leveler. The Cu electrodeposition method comprises the steps of: (i) electrodepositing a substrate for 5 to 50 seconds in a Cu electrodeposition solution prepared by adding polyethylene glycol, sodium chloride, and bis(3-sulfopropyl)disulfide into a basic solution comprising copper sulfate and sulfuric acid; (ii) cleaning the electrodeposited substrate with ultra-pure water for 1 to 5 seconds, and removing water from the substrate using nitrogen gas; (iii) adding benzotriazole into the basic solution, and performing post-electrodeposition of the water-removed substrate for 140 seconds; and (iv) cleaning the post-electrodeposited substrate with ultra-pure water for 5 to 10 seconds, and removing water from the substrate using nitrogen gas.
Abstract translation: 提供了通过使用包含苯并三唑作为整平剂的Cu电沉积溶液同时进行保形沉积并制造不含凸点的Cu薄膜的Cu电沉积方法。 在具有包含硫酸铜，硫酸，聚乙二醇，氯化钠和双（3-磺基丙基）二硫化物的碱性组成的Cu电沉积溶液中，Cu电沉积溶液包含苯并三唑作为整平剂。 在使用包含硫酸铜，硫酸，聚乙二醇，氯化钠和双（3-磺基丙基）二硫化物的碱性组合物的Cu电沉积方法中，Cu电沉积方法包括使用苯并三唑进行电沉积后或电后沉积 作为矫直机。 Cu电沉积方法包括以下步骤：（i）在通过将聚乙二醇，氯化钠和双（3-磺丙基）二硫化物加入到包含硫酸铜和碱性溶液中的Cu电沉积溶液中电沉积基材5至50秒， 硫酸; （ii）用超纯水清洗电沉积基片1〜5秒钟，用氮气从基板上除去水分; （iii）将苯并三唑加入到碱性溶液中，并且对水去除的基材进行电后沉积140秒; （iv）用超纯水清洗后电沉积基材5〜10秒，用氮气从基板上除去水分。
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公开(公告)号：KR1020060067453A
公开(公告)日：2006-06-20
申请号：KR1020040106238
申请日：2004-12-15
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C25D3/46
CPC classification number: C25D3/46 , C25D5/50 , C25D7/12 , H01L21/2885
Abstract: 본 발명은 팔라듐-은 활성화 방법을 이용한 은 전해도금방법에 관한 것으로서, 반도체 금속 배선 공정에서 높은 비저항을 갖는 기판 위에 활성화 방법을 통하여 전해도금이 가능하도록 씨앗층 없이 핵을 생성시킨 후 은 전해도금을 실시하여 균일하고 결함이 없는 은 박막을 형성시키며, 비저항이 낮은 은을 현재보다 고집적화된 반도체 배선공정의 재료로 사용할 수 있는 효과가 있다.
팔라듐, 은, 활성화, 전해도금, 핵, 씨앗층, 확산방지층, 금속배선, 비저항-
公开(公告)号：KR1020040080466A
公开(公告)日：2004-09-20
申请号：KR1020030015228
申请日：2003-03-11
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C25D3/46
Abstract: PURPOSE: An electroplating solution is provided to form a defectless silver thin film so that the thin film is properly applied to high integrated semiconductor metallization process by adding benzotriazole compound and thiourea compound to silver plating solution, and a method for forming silver thin film using the solution is provided. CONSTITUTION: The electroplating solution for forming a silver thin film contains benzotriazole compound and thiourea compound as additives in a silver electroplating solution, wherein the benzotriazole compound is a compound selected from the group consisting of 1,2,3-benzotriazole, 5-methylbenzotriazole, 5,6-dimethylbenzotriazole, phenylbenzotriazole, 5-ethylbenzotriazole, 5-methoxybenzotriazole, 5-aminobenzotriazole, 5-dimethylaminobenzotriazole, 5-acetamidobenzotriazole, 5-methanesulfonamidobenzotriazole, 5-aminocarbonylbenzotriazole, 5-methoxycarbonylbenzotriazole, 5-carboxybenzotriazole, 5-chlorobenzotriazole, 5-bromobenzotriazole, 5-nitrobenzotriazole, 4-nitrobenzotriazole, 5-cyanobenzotriazole, 5-sulfobenzotriazole and 4-aminobenzotriazole, wherein the thiourea compound is a compound selected from the group consisting of thiourea and alkylthiourea compounds, wherein the silver electroplating solution has pH of 7 to 12 and comprises potassium silver cyanide (KAg(CN)2) and potassium cyanide (KCN), and wherein the silver electroplating solution comprises potassium silver cyanide, thiourea compound and benzotriazole compound in a mole ratio of 1:0.071:0.0091.
Abstract translation: 目的：提供电镀溶液以形成无缺陷的银薄膜，使得通过向镀银溶液中加入苯并三唑化合物和硫脲化合物将薄膜适当地应用于高集成半导体金属化工艺，以及使用 提供解决方案。 构成：用于形成银薄膜的电镀溶液含有苯并三唑化合物和硫脲化合物作为银电镀溶液中的添加剂，其中苯并三唑化合物是选自1,2,3-苯并三唑，5-甲基苯并三唑， 5,5-二甲基苯并三唑，苯基苯并三唑，5-乙基苯并三唑，5-甲氧基苯并三唑，5-氨基苯并三唑，5-二甲基氨基苯并三唑，5-乙酰氨基苯并三唑，5-甲磺酰氨基苯并三唑，5-氨基羰基苯并三唑，5-甲氧基羰基苯并三唑，5-羧基苯并三唑，5-氯苯并三唑， 溴苯并三唑，5-硝基苯并三唑，4-硝基苯并三唑，5-氰基苯并三唑，5-磺基苯并三唑和4-氨基苯并三唑，其中硫脲化合物是选自硫脲和烷基硫脲化合物的化合物，其中银电镀溶液的pH为7〜 12，并包含氰化钾银（KAg（CN）2）和钾 氰化钾（KCN），并且其中所述电镀银溶液包含氰化银氰化银，硫脲化合物和苯并三唑化合物，摩尔比为1:0.071:0.0091。
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公开(公告)号：KR100727214B1
公开(公告)日：2007-06-13
申请号：KR1020040106238
申请日：2004-12-15
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C25D3/46
Abstract: 본 발명은 팔라듐-은 활성화 방법을 이용한 은 전해도금방법에 관한 것으로서, 반도체 금속 배선 공정에서 높은 비저항을 갖는 기판 위에 활성화 방법을 통하여 전해도금이 가능하도록 씨앗층 없이 핵을 생성시킨 후 은 전해도금을 실시하여 균일하고 결함이 없는 은 박막을 형성시키며, 비저항이 낮은 은을 현재보다 고집적화된 반도체 배선공정의 재료로 사용할 수 있는 효과가 있다.
팔라듐, 은, 활성화, 전해도금, 핵, 씨앗층, 확산방지층, 금속배선, 비저항-
公开(公告)号：KR1020070059616A
公开(公告)日：2007-06-12
申请号：KR1020050118659
申请日：2005-12-07
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C23C18/54
Abstract: A Cu electroless-plating method which can manufacture a Cu film free of defects in semiconductor wiring by forming a bump as an evidence of the conformal deposition while minimizing roughness of a film by performing conformal deposition of a Cu electroless-plating solution comprising N.N-dimethyl dithiocarbamic acid(3-sulfopropyl)ester and 2,2'-dipyridyl as additives by using electroless-plating only without a seed layer is provided. In a Cu electroless-plating solution for semiconductor Cu wiring comprising copper sulfate, ethylene diamine tetraacetic acid(EDTA), formaldehyde(HCHO), and potassium hydroxide, the Cu electroless-plating solution comprises N.N-dimethyl dithiocarbamic acid(3-sulfopropyl)ester(DPS) and 2,2'-dipyridyl as additives. In Cu electroless-plating for semiconductor Cu wiring, a Cu electroless-plating method comprises performing electrodeposition by performing Cu filling using a Cu electroless-plating solution comprising N.N-dimethyl dithiocarbamic acid(3-sulfopropyl)ester(DPS) and 2,2'-dipyridyl as additives without forming a seed layer. The Cu electroless-plating method comprises the steps of: (i) removing a natural oxide film of a substrate on which a diffusion barrier is formed using an aqueous hydrofluoric acid solution; (ii) activating the surface of the natural oxide film-removed substrate using a palladium catalyst; and (iii) filling Cu into the activated substrate using the Cu electroless-plating solution.
Abstract translation: 一种Cu化学镀方法，其可以通过形成凸起来制造半导体布线中的缺陷的Cu膜，同时通过使包含NN-二甲基甲酰胺的Cu化学镀溶液进行保形沉积来最小化膜的粗糙度 提供二硫代氨基甲酸（3-磺基丙基）酯和2,2'-联吡啶作为添加剂，仅使用无电镀仅用于种子层。 在包含硫酸铜，乙二胺四乙酸（EDTA），甲醛（HCHO）和氢氧化钾的半导体Cu布线的Cu化学镀溶液中，Cu无电镀溶液包含NN-二甲基二硫代氨基甲酸（3-磺丙基）酯 （DPS）和2,2'-联吡啶作为添加剂。 在Cu半导体Cu布线的无电解电镀中，Cu化学镀方法包括通过使用包含N，N-二甲基二硫代氨基甲酸（3-磺基丙基）酯（DPS）的Cu化学镀溶液和2,2' 二吡啶基作为添加剂而不形成种子层。 Cu化学镀方法包括以下步骤：（i）使用氢氟酸水溶液除去其上形成有扩散阻挡层的基板的天然氧化物膜; （ii）使用钯催化剂活化除去天然氧化物膜的表面; 和（iii）使用Cu化学镀溶液将Cu填充到活化的底物中。
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