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Patent Agency Ranking
公开(公告)号：KR101057849B1
公开(公告)日：2011-08-19
申请号：KR1020090059214
申请日：2009-06-30
Applicant: 포항공과대학교 산학협력단
Abstract: 본 발명에 따른 커패시터는, 도체 전극; N형 반도체로 구성된 반도체 전극; 및 도체 전극과 반도체 전극 사이에 마련된 강유전체 박막;을 포함한다. 또한, 반도체 전극은 기판에 N형 도핑이 될 수 있다. 또한, 기판은 SrTiO
3 으로 마련될 수 있다. 또한, N형 도핑물질은 Nb일 수 있다. 또한, Nb 도핑율은 0wt% 초과 0.5 wt% 이하일 수 있다. 또한, 도체 전극은 Au, Pt, SrRuO
3
, (La,Sr)CoO
3
중의 어느 하나로 마련될 수 있다. 또한, 강유전체 박막은 BaTiO
3 를 포함할 수 있다. 또한, 도체 전극은 캐소드(cathod)일 수 있다. 상기 과제를 해결하기 위하여 본 발명에 따른 커패시터의 제조방법은, N형 반도체로 구성된 반도체 전극을 마련하는 단계; 및 반도체 전극상에 펄스 레이져 증착방법(PLD) 및 레이저 분자빔 에피탁시(LMBE)방법을 이용하여 강유전체 박막을 증착하는 단계;를 포함한다.
강유전체, 박막, 커패시터Abstract translation: 根据本发明的电容器包括：导电电极; 由N型半导体构成的半导体电极; 并且在导体电极和半导体电极之间提供铁电薄膜。 此外，半导体电极可以是N型掺杂到衬底。 此外，衬底由SrTiO制成
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公开(公告)号：KR1020100098265A
公开(公告)日：2010-09-06
申请号：KR1020090059214
申请日：2009-06-30
Applicant: 포항공과대학교 산학협력단
Abstract: PURPOSE: A capacitor is provided to prevent dielectric breakdown by interposing a ferroelectric thin film between a conductive electrode and a semiconductor electrode. CONSTITUTION: A capacitor includes a conductive electrode, a semiconductor electrode, and a ferroelectric thin film. A semiconductor electrode is formed by doping a substrate with N type materials. The substrate is made of SrTiO3. The N type material is Nb. The doping ratio of Nb is 0 to 0.5 wt%. A ferroelectric thin film is deposited on a semiconductor electrode by a PLD(Pulsed Laser Deposition) method. The ferroelectric thin film includes BaTiO3. The ferroelectric thin film is deposited inside a main chamber(1).
Abstract translation: 目的：提供电容器以通过在导电电极和半导体电极之间插入铁电薄膜来防止电介质击穿。 构成：电容器包括导电电极，半导体电极和铁电薄膜。 通过用N型材料掺杂衬底形成半导体电极。 衬底由SrTiO3制成。 N型材料为Nb。 Nb的掺杂比为0〜0.5重量％。 通过PLD（脉冲激光沉积）法将铁电薄膜沉积在半导体电极上。 铁电薄膜包括BaTiO3。 铁电薄膜沉积在主室（1）内。
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公开(公告)号：KR101131702B1
公开(公告)日：2012-04-03
申请号：KR1020090059215
申请日：2009-06-30
Applicant: 포항공과대학교 산학협력단
IPC: G01N27/12 , C04B35/453
Abstract: PURPOSE: Gas sensor composition, a gas sensor comprising the same and a manufacturing method of gas sensor composition are provided to obtain high reaction sensitivity to a low concentration of gas. CONSTITUTION: Gas sensor composition comprises the material which is formed by doping the transition metal on an N-type semiconductor. The N-type semiconductor is a material selected from ZnO, Sn2O, and TiO2. The transition metal is cobalt. The generated material Zn(1-x)MxO, where M represents the transition metal, and x exceeds 0 and is 0.2 or less. The generated material forms a thin film of a thickness of 10-100nm.
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公开(公告)号：KR1020090093371A
公开(公告)日：2009-09-02
申请号：KR1020080018865
申请日：2008-02-29
Applicant: 포항공과대학교 산학협력단
Abstract: A semiconductor and manufacturing method thereof having the ferromagnetism in room temperature is provided to increase spin polarization of the electronics and maximize information processing. SrCO3, and Fe2O3, and MoO3 powder are mixed(S100). The mixing ratio of each powder is range of Fe : Mo = 65% : 35%. The mixed powder is sintered in the proper condition(S200). A sintering is performed under 1,000°C~1,300°C for 10 hours ~24 hours. A reduction is performed on the sintered powder under gas atmosphere of hydrogen 2 % volume ratio, and argon 98% volume ratio(S300). The sintering and the reduced powder as a target are deposited to the substrate(S400).
Abstract translation: 提供其在室温下具有铁磁性的半导体及其制造方法以增加电子设备的自旋极化并使信息处理最大化。 SrCO 3和Fe 2 O 3，和MoO 3粉末混合（S100）。 每种粉末的混合比范围为Fe:Mo = 65％:35％。 混合粉末在适当的条件下烧结（S200）。 在1000℃〜1300℃下烧结10小时〜24小时。 在氢气体积比为2％的气体气氛和氩气98体积比（S300）下，对烧结粉末进行还原。 作为靶的烧结和还原粉末沉积到基板上（S400）。
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公开(公告)号：KR1020100098266A
公开(公告)日：2010-09-06
申请号：KR1020090059215
申请日：2009-06-30
Applicant: 포항공과대학교 산학협력단
IPC: G01N27/12 , C04B35/453
Abstract: PURPOSE: Gas sensor composition, a gas sensor comprising the same and a manufacturing method of gas sensor composition are provided to obtain high reaction sensitivity to a low concentration of gas. CONSTITUTION: Gas sensor composition comprises the material which is formed by doping the transition metal on an N-type semiconductor. The N-type semiconductor is a material selected from ZnO, Sn2O, and TiO2. The transition metal is cobalt. The generated material Zn(1-x)MxO, where M represents the transition metal, and x exceeds 0 and is 0.2 or less. The generated material forms a thin film of a thickness of 10-100nm.
Abstract translation: 目的：提供气体传感器组合物，包含该气体传感器组合物的气体传感器和气体传感器组合物的制造方法，以获得对低浓度气体的高反应灵敏度。 构成：气体传感器组成包括通过在N型半导体上掺杂过渡金属形成的材料。 N型半导体是选自ZnO，Sn 2 O和TiO 2的材料。 过渡金属是钴。 生成的材料Zn（1-x）MxO，其中M表示过渡金属，x超过0且为0.2以下。 生成的材料形成厚度为10-100nm的薄膜。
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