다층 구조 반도체 나노결정의 발광 파장 가변 방법
    3.
    发明公开
    다층 구조 반도체 나노결정의 발광 파장 가변 방법 失效
    改变多层半导体纳米晶的发射波长的方法

    公开(公告)号:KR1020110042043A

    公开(公告)日:2011-04-22

    申请号:KR1020110028890

    申请日:2011-03-30

    Abstract: PURPOSE: A method for changing the light emitting wavelength of multi-layered semiconductor nano-crystal is provided to reversibly change the wavelength by introducing electric charges on the surface of the crystal. CONSTITUTION: Multi-layered semiconductor nano-crystal includes two or more semiconductor layers(10, 20) composed of one or more semiconductor materials. Electric charges are introduced on the surface of or the inside of the multi-layered semiconductor nano-crystal by processing the multi-layered semiconductor nano-crystal with electron donors and acceptors or applying electric filed to the multi-layered semiconductor nano-crystal. Charged electric charges are eliminated.

    Abstract translation: 目的:提供改变多层半导体纳米晶体的发光波长的方法,通过在晶体表面引入电荷来可逆地改变波长。 构成:多层半导体纳米晶体包括由一种或多种半导体材料构成的两个或多个半导体层(10,20)。 通过用电子给体和受体加工多层半导体纳米晶体或将电场施加到多层半导体纳米晶体,在多层半导体纳米晶体的表面或内部引入电荷。 充电电荷被消除。

    표면에 전하가 도입된 반도체 나노결정 및 이를 포함하는 광소자
    4.
    发明公开
    표면에 전하가 도입된 반도체 나노결정 및 이를 포함하는 광소자 有权
    具有表面电荷的半导体纳米晶体和包含其的光电装置

    公开(公告)号:KR1020100028756A

    公开(公告)日:2010-03-15

    申请号:KR1020080087633

    申请日:2008-09-05

    CPC classification number: H01L31/0368 B82Y20/00 B82Y40/00 H01L31/0384

    Abstract: PURPOSE: A semiconductor nanocrystal in which electric charge is introduced on the surface and an optical device including the same are provided to be applied to all kinds of optical devices including an electro-optic modulator by showing reversible change of an emitting wavelength and high photon luminous efficiency when an electric field is applied. CONSTITUTION: A semiconductor nanocrystal in which electric charge is introduced on the surface is a multi-layered semiconductor nanocrystal including two or more semiconductor layers. The semiconductor nanocrystal has one or more interfaces in which a band-gap crosses and the electric charge is introduced on the surface of the semiconductor nanocrystal. A conduction band of a first semiconductor layer(10) is higher than the conduction band of a second semiconductor layer(20). A valence band of the first semiconductor layer is higher than the valence band of the second semiconductor layer.

    Abstract translation: 目的:提供一种其表面上引入电荷的半导体纳米晶体和包括该半导体纳米晶体的光学器件,通过显示出发射波长的可逆变化和高光子发光,被应用于包括电光调制器的各种光学器件 施加电场时的效率。 构成:其中在表面上引入电荷的半导体纳米晶体是包括两个或更多个半导体层的多层半导体纳米晶体。 半导体纳米晶体具有一个或多个界面,其中带隙交叉并且电荷被引入到半导体纳米晶体的表面上。 第一半导体层(10)的导带高于第二半导体层(20)的导带。 第一半导体层的价带高于第二半导体层的价带。

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