公开(公告)号：KR1019920006856B1

公开(公告)日：1992-08-20

申请号：KR1019900004784

申请日：1990-04-07

Applicant: 한국과학기술연구원

Inventor： 김윤호 ,  김문규 ,  고재웅 ,  신해근

IPC: H01G4/30 ,  H01G4/33

CPC classification number: H01G4/302 ,  Y10T29/435

Abstract: The method comprises producing a pore layer by stacking and sintering dielectric layers (1) applied with quasi-electrode material (2). The pore layer, oxidised by sintering, is reduced and then molten metal is permeated into the interion of the pore layer without applying high pressure. The pore layer after sintering is formed with NiO by using a mixture of 2NiCO3-3Ni(OH)2-4H2O and carbon black as quasi-electrode material. Pb, Sn or Pb-Sn alloy is the molten metal for the internal electrode. The NiO surface forming the pore layer is reduced to Ni so as to increase the surface energy and enhance contact with the other metal.

Abstract translation: 该方法包括通过堆叠和烧结施加准电极材料（2）的电介质层（1）来生产孔层。 通过烧结氧化的孔层被还原，然后在不施加高压的情况下将熔融金属渗入孔层的中间层。 通过使用2NiCO3-3Ni（OH）2-4H2O和炭黑的混合物作为准电极材料，用NiO形成烧结后的孔层。 Pb，Sn或Pb-Sn合金是用于内部电极的熔融金属。 形成孔层的NiO表面被还原为Ni，从而增加表面能并增强与另一种金属的接触。

公开(公告)号：KR100056909B1

公开(公告)日：1992-12-01

申请号：KR1019900004784

申请日：1990-04-07

Applicant: 한국과학기술연구원

Inventor： 김윤호 ,  김문규 ,  고재웅 ,  신해근

IPC: H01G4/30 ,  H01G4/33

公开(公告)号：KR1019910019263A

公开(公告)日：1991-11-30

申请号：KR1019900004784

申请日：1990-04-07

Applicant: 한국과학기술연구원

Inventor： 김윤호 ,  김문규 ,  고재웅 ,  신해근

IPC: H01G4/30 ,  H01G4/33

Abstract: 내용 없음