公开(公告)号：KR100395243B1

公开(公告)日：2003-08-21

申请号：KR1020010028894

申请日：2001-05-25

Applicant: 한국과학기술연구원

Inventor： 문성욱 ,  김근태

IPC: H01L27/146

Abstract: PURPOSE: A method for fabricating an image sensing device combined with a waveguide type antenna is provided to combine a cylindrical antenna with a sensing element by using a MEMS(Micro Electro Mechanical System). CONSTITUTION: A metal layer(110) is formed on a surface of a semiconductor substrate(100) in order to form a seed layer on the surface of the semiconductor substrate(100). A photoresist layer(120) of predetermined thickness is applied on an upper face of the metal layer(110). The thickness of photoresist layer(120) is about 100 to 200 micro meter. A patterning process is performed using an exposure mask. A photoresist layer pattern is formed by removing partially the photoresist layer(120) from the metal layer(110). A circular pillar of a waveguide type antenna is formed by removing the photoresist layer pattern. A conductive layer(140) is deposited on a whole surface of the above structure by using an electroless plating method. The remaining photoresist pattern is removed. A structure of a waveguide is fabricated by separating the metal layer(110) from the above structure.

Abstract translation: 目的：提供一种用于制造与波导型天线组合的图像感测装置的方法，以通过使用MEMS（微机电系统）将圆柱形天线与感测元件组合。 构成：在半导体衬底（100）的表面上形成金属层（110），以便在半导体衬底（100）的表面上形成晶种层。 预定厚度的光致抗蚀剂层（120）被施加在金属层（110）的上表面上。 光致抗蚀剂层（120）的厚度约为100至200微米。 使用曝光掩模进行构图工艺。 通过从金属层（110）中部分去除光致抗蚀剂层（120）来形成光致抗蚀剂层图案。 通过去除光刻胶层图案来形成波导型天线的圆柱。 通过使用无电电镀方法在上述结构的整个表面上沉积导电层（140）。 剩余的光致抗蚀剂图案被去除。 通过从上述结构分离金属层（110）来制造波导的结构。

公开(公告)号：KR1020020090400A

公开(公告)日：2002-12-05

申请号：KR1020010028896

申请日：2001-05-25

Applicant: 한국과학기술연구원

Inventor： 문성욱 ,  김근태

IPC: H01L27/146

CPC classification number: H01L27/146

Abstract: PURPOSE: A method for fabricating an image sensing device combined with a three-dimensional horn antenna is provided to improve sensitivity of the image sensing device by using a MEMS(Micro Electro Mechanical System). CONSTITUTION: A sacrificial oxide layer is formed on a semiconductor substrate(100). A sacrificial oxide layer pattern is formed by performing a patterning process using an etch mask. The first silicon nitride layer(106) is deposited thereon. The first silicon nitride layer pattern is formed by performing the patterning process. A vanadium oxide layer(110) is deposited thereon. A vanadium oxide layer pattern is formed by the patterning process. A conductive layer(114) is deposited thereon. A conductive layer pattern is formed by performing the patterning process. The second silicon nitride layer(118) is deposited thereon. The second silicon nitride pattern is formed by performing the patterning process. The third silicon layer(122) is deposited thereon. A sidewall space is formed by performing the patterning process. The sacrificial oxide layer is removed. A sense device combined with a three-dimensional horn antenna is completed by using an etch mask.

Abstract translation: 目的：提供一种用于制造与三维喇叭天线结合的图像感测装置的方法，以通过使用MEMS（微机电系统）来提高图像感测装置的灵敏度。 构成：牺牲氧化物层形成在半导体衬底（100）上。 通过使用蚀刻掩模进行图案化处理来形成牺牲氧化物层图案。 第一氮化硅层（106）被沉积在其上。 通过进行图案化工艺形成第一氮化硅层图案。 氧化钒层（110）沉积在其上。 通过图案化工艺形成氧化钒层图案。 导电层（114）沉积在其上。 通过进行图案化工艺形成导电层图案。 第二氮化硅层（118）沉积在其上。 通过进行图案化工艺来形成第二氮化硅图案。 第三硅层（122）沉积在其上。 通过进行图案化工艺形成侧壁空间。 去除牺牲氧化物层。 通过使用蚀刻掩模来完成与三维喇叭天线组合的感测装置。

公开(公告)号：KR100407771B1

公开(公告)日：2003-12-03

申请号：KR1020010028895

申请日：2001-05-25

Applicant: 한국과학기술연구원

Inventor： 문성욱 ,  김근태

IPC: G01J1/52 ,  H04N5/335 ,  H01L27/146

Abstract: PURPOSE: An image sensing device combined with a three-dimensional horn antenna is provided to fabricate a three-dimensional reception antenna and a sensor and combine the antenna and the sensor with each other, so as to sensitivity of the sensor. CONSTITUTION: A horn antenna structure(20) is supported by supports(30a,30b) on a semiconductor substrate(10). A waveguide(25) of a horn antenna is formed at the center of the horn antenna structure. A sensor(40) is formed under the waveguide. The sensor includes an absorption layer(50) having the same size as the width of the waveguide and a thermal isolation leg(60) having a length larger than the width of the waveguide. The thermal isolation leg is formed in a circular shape such that the leg is extended.

Abstract translation: 目的：提供一种结合三维喇叭天线的图像传感装置，以制造三维接收天线和传感器，并将天线和传感器相互组合，从而提高传感器的灵敏度。 构成：喇叭天线结构（20）由半导体衬底（10）上的支撑件（30a，30b）支撑。 喇叭天线的波导（25）形成在喇叭天线结构的中心。 传感器（40）形成在波导下方。 该传感器包括具有与波导宽度相同尺寸的吸收层（50）和长度大于波导宽度的热绝缘腿（60）。 隔热腿形成为圆形以使腿延伸。

公开(公告)号：KR1020020090399A

公开(公告)日：2002-12-05

申请号：KR1020010028895

申请日：2001-05-25

Applicant: 한국과학기술연구원

Inventor： 문성욱 ,  김근태

IPC: G01J1/52 ,  H04N5/335 ,  H01L27/146

CPC classification number: H04N5/357 ,  B81C3/004 ,  G01J5/20

Abstract: PURPOSE: An image sensing device combined with a three-dimensional horn antenna is provided to fabricate a three-dimensional reception antenna and a sensor and combine the antenna and the sensor with each other, so as to sensitivity of the sensor. CONSTITUTION: A horn antenna structure(20) is supported by supports(30a,30b) on a semiconductor substrate(10). A waveguide(25) of a horn antenna is formed at the center of the horn antenna structure. A sensor(40) is formed under the waveguide. The sensor includes an absorption layer(50) having the same size as the width of the waveguide and a thermal isolation leg(60) having a length larger than the width of the waveguide. The thermal isolation leg is formed in a circular shape such that the leg is extended.

Abstract translation: 目的：提供与三维喇叭天线结合的图像感测装置，以制造三维接收天线和传感器，并将天线和传感器相互结合，以便传感器的灵敏度。 构成：喇叭天线结构（20）由半导体衬底（10）上的支撑（30a，30b）支撑。 在喇叭天线结构的中心形成喇叭天线的波导（25）。 传感器（40）形成在波导下方。 传感器包括具有与波导宽度相同尺寸的吸收层（50）和具有大于波导宽度的长度的热隔离支脚（60）。 热隔离腿形成为圆形，使得腿部延伸。

公开(公告)号：KR1020020090398A

公开(公告)日：2002-12-05

申请号：KR1020010028894

申请日：2001-05-25

Applicant: 한국과학기술연구원

Inventor： 문성욱 ,  김근태

IPC: H01L27/146

Abstract: PURPOSE: A method for fabricating an image sensing device combined with a waveguide type antenna is provided to combine a cylindrical antenna with a sensing element by using a MEMS(Micro Electro Mechanical System). CONSTITUTION: A metal layer(110) is formed on a surface of a semiconductor substrate(100) in order to form a seed layer on the surface of the semiconductor substrate(100). A photoresist layer(120) of predetermined thickness is applied on an upper face of the metal layer(110). The thickness of photoresist layer(120) is about 100 to 200 micro meter. A patterning process is performed using an exposure mask. A photoresist layer pattern is formed by removing partially the photoresist layer(120) from the metal layer(110). A circular pillar of a waveguide type antenna is formed by removing the photoresist layer pattern. A conductive layer(140) is deposited on a whole surface of the above structure by using an electroless plating method. The remaining photoresist pattern is removed. A structure of a waveguide is fabricated by separating the metal layer(110) from the above structure.

Abstract translation: 目的：提供一种制造与波导型天线结合的图像感测装置的方法，通过使用MEMS（微机电系统）将圆柱形天线与感测元件组合在一起。 构成：在半导体衬底（100）的表面上形成金属层（110），以在半导体衬底（100）的表面上形成晶种层。 将预定厚度的光致抗蚀剂层（120）施加在金属层（110）的上表面上。 光致抗蚀剂层（120）的厚度为约100至200微米。 使用曝光掩模进行构图处理。 通过从金属层（110）部分去除光致抗蚀剂层（120）来形成光致抗蚀剂层图案。 通过去除光致抗蚀剂层图案来形成波导型天线的圆柱。 通过使用化学镀方法在上述结构的整个表面上沉积导电层（140）。 去除剩余的光致抗蚀剂图案。 通过将金属层（110）与上述结构分离来制造波导的结构。

公开(公告)号：KR100395244B1

公开(公告)日：2003-08-21

申请号：KR1020010028896

申请日：2001-05-25

Applicant: 한국과학기술연구원

Inventor： 문성욱 ,  김근태

IPC: H01L27/146

CPC classification number: H01L27/146

Abstract: PURPOSE: A method for fabricating an image sensing device combined with a three-dimensional horn antenna is provided to improve sensitivity of the image sensing device by using a MEMS(Micro Electro Mechanical System). CONSTITUTION: A sacrificial oxide layer is formed on a semiconductor substrate(100). A sacrificial oxide layer pattern is formed by performing a patterning process using an etch mask. The first silicon nitride layer(106) is deposited thereon. The first silicon nitride layer pattern is formed by performing the patterning process. A vanadium oxide layer(110) is deposited thereon. A vanadium oxide layer pattern is formed by the patterning process. A conductive layer(114) is deposited thereon. A conductive layer pattern is formed by performing the patterning process. The second silicon nitride layer(118) is deposited thereon. The second silicon nitride pattern is formed by performing the patterning process. The third silicon layer(122) is deposited thereon. A sidewall space is formed by performing the patterning process. The sacrificial oxide layer is removed. A sense device combined with a three-dimensional horn antenna is completed by using an etch mask.

Abstract translation: 目的：提供一种制造与三维喇叭天线相结合的图像传感装置的方法，以通过使用MEMS（微机电系统）来提高图像传感装置的灵敏度。 构成：在半导体衬底（100）上形成牺牲氧化物层。 通过使用蚀刻掩模执行构图工艺来形成牺牲氧化物层图案。 第一氮化硅层（106）沉积在其上。 通过执行构图工艺形成第一氮化硅层图案。 氧化钒层（110）沉积在其上。 通过构图工艺形成钒氧化物层图案。 导电层（114）沉积在其上。 通过执行构图工艺形成导电层图案。 第二氮化硅层（118）沉积在其上。 通过执行构图工艺形成第二氮化硅图案。 第三硅层（122）沉积在其上。 通过执行构图工艺形成侧壁空间。 牺牲氧化层被去除。 通过使用蚀刻掩模来完成与三维喇叭天线组合的感测装置。