公开(公告)号：KR1020130134123A

公开(公告)日：2013-12-10

申请号：KR1020120057407

申请日：2012-05-30

Applicant: 한국과학기술연구원

Inventor： 김희숙 ,  염다영 ,  박민 ,  임순호 ,  손정곤 ,  이상수

IPC: C01B31/02 ,  B01J19/10 ,  B01J19/12

CPC classification number: C01B32/182 ,  B01J19/10 ,  B01J19/126 ,  C01B32/23 ,  C01B35/02 ,  C01B2204/22

Abstract: The present invention relates to the boron-doped reduction graphene capable of adjusting the physical properties of a semiconductor and conductivity and a manufacturing method thereof and, preferably, to a mass production method. The boron-doped reduction graphene according to the present invention exhibits excellent conductivity and improved stability and is usefully used in a graphene semiconductor since the boron-doped reduction graphene shows p-type properties. The manufacturing method for the reduction graphene according to the present invention is environment-friendly, simplifies a process method, reduces production costs, facilitates mass production and adjusts the physical properties of a semiconductor and conductivity, thereby being usefully used in the production of the graphene semiconductor. [Reference numerals] (AA) Manufacturing the dispersion of graphene oxides and boron oxides;(BB) Manufacturing graphene oxide-boron oxide solid mixtures;(CC) Reducing and doping through heat treatment;(DD) Washing and drying residual boron oxides

Abstract translation: 本发明涉及能够调节半导体的物理性能和导电性的硼掺杂的还原石墨烯及其制造方法，优选涉及大规模生产方法。 根据本发明的硼掺杂的还原石墨烯显示出优异的导电性和改进的稳定性，并且有用地用于石墨烯半导体中，因为掺杂硼的还原石墨烯显示p型性质。 根据本发明的还原石墨烯的制造方法是环境友好的，简化了处理方法，降低了生产成本，促进了大规模生产并且调节了半导体的物理性能和导电性，从而有利地用于生产石墨烯 半导体。 （AA）制造石墨烯氧化物和氧化硼的分散体;（BB）制造氧化石墨氧化物 - 氧化硼固体混合物;（CC）通过热处理减少和掺杂;（DD）洗涤和干燥残留的硼氧化物