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公开(公告)号：KR101654119B1
公开(公告)日：2016-09-06
申请号：KR1020140143938
申请日：2014-10-23
Applicant: 한국과학기술연구원
IPC: C01B33/04 , C01B33/107
CPC classification number: C01B33/043 , B01J8/02 , B01J8/025 , B01J8/0278 , B01J8/0285 , B01J8/06 , B01J8/067 , B01J21/18 , B01J27/14 , B01J27/24 , B01J35/02 , B01J37/084 , B01J2208/00203 , B01J2208/00256 , B01J2208/0053 , B01J2208/024
Abstract: 본발명은헤테로원자가포함된활성탄을이용한하이드로실란의제조방법에관한것으로서, 더욱상세하게는헤테로원자가포함된활성탄촉매를사용하여염화실란은재분배반응시킴으로서경제적으로고순도의하이드로실란을제조하는방법에관한것이다.
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公开(公告)号：KR1020160047713A
公开(公告)日：2016-05-03
申请号：KR1020140143938
申请日：2014-10-23
Applicant: 한국과학기술연구원
IPC: C01B33/04 , C01B33/107
CPC classification number: C01B33/043 , B01J8/02 , B01J8/025 , B01J8/0278 , B01J8/0285 , B01J8/06 , B01J8/067 , B01J21/18 , B01J27/14 , B01J27/24 , B01J35/02 , B01J37/084 , B01J2208/00203 , B01J2208/00256 , B01J2208/0053 , B01J2208/024 , C01B33/04 , B01J31/06 , C01B33/107 , C01B33/10778
Abstract: 본발명은헤테로원자가포함된활성탄을이용한하이드로실란의제조방법에관한것으로서, 더욱상세하게는헤테로원자가포함된활성탄촉매를사용하여염화실란은재분배반응시킴으로서경제적으로고순도의하이드로실란을제조하는방법에관한것이다.
Abstract translation: 本发明涉及使用含杂原子的活性炭制备氢硅烷的方法。 更具体地，本发明涉及通过使用含杂原子的活性炭催化剂歧化氯硅烷来经济地制备高纯度氢硅烷的方法。
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公开(公告)号：KR1020110059403A
公开(公告)日：2011-06-02
申请号：KR1020090116123
申请日：2009-11-27
Applicant: 한국과학기술연구원
CPC classification number: C07F7/14
Abstract: PURPOSE: A method for preparing allylchlorosilanes is provided to obtain allylchlorosilanes with high yield by Si-C coupling reaction without a catalyst. CONSTITUTION: A method for preparing allylchlorosilanes of chemical formula 1 comprises: a step of mixing allylchloride derivatives and hydrosilane derivatives in liquid or vapor state in a preheater of 150-350°C filled with a filler such as glass bead or metal filler to prepare a mixture; and a step of inputting the mixture into a reactor and performing coupling at 400-650°C and 1-3 bar for Si-C coupling reaction. The reactor comprises a spray.
Abstract translation: 目的：提供烯丙基氯硅烷的制备方法，通过没有催化剂的Si-C偶联反应得到高产率的烯丙基氯硅烷。 构成：制备化学式1的烯丙基氯硅烷的方法包括：在填充有诸如玻璃珠或金属填料的填料的150-350℃的预热器中混合氯化烯烃衍生物和液体或蒸汽状态的氢化硅烷衍生物的步骤，以制备 混合物; 以及将混合物输入反应器并在400-650℃和1-3巴条件下进行Si-C偶联反应的偶联的步骤。 反应器包括喷雾器。
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