Abstract:
실시예에 따르면, 액티브 매트릭스, 로우 라인 선택부 및 출력 멀티플렉서부로 구성된 CMOS회로 기판; 및 상기 CMOS 회로 기판 상에 적층되며, 액티브 셀과 레퍼런스 셀로 구성되는 볼로미터를 포함하고, 웨이퍼 또는 칩 상태에서의 상기 볼로미터에 대한 동작, 최종 및 파라메트릭 테스트를 위해, 상기 로우 라인 선택부는 상기 볼로미터 중 전압 인가의 대상이 되는 셀을 선택하고, 상기 출력 멀티플렉서부는 상기 전압 인가에 따른 전류 특성을 출력하는 적외선 센서칩이 제공된다.
Abstract:
PURPOSE: A system in-packaging method of a semi-active focal plane array(SA-FPA) sensor using a diode switching process is provided to attach an SA-FPA sensor chip and an output control integrated circuit chip on the same wafer level by separately arranging the SA-FPA sensor chip and the output control integrated circuit chip, thereby detecting a malfunction of an output control integrated circuit in beforehand. CONSTITUTION: An insulating film(110) is laminated on a substrate(100). An ROIC(Read-Out Integrated Circuit) cap(120) and a bolometer array cap(130) are arranged side by side on the surface of the insulating film. The ROIC cap packages an output control integrated circuit chip. The bolometer array cap packages a bolometer array. An ROIC and the substrate are connected to each other using a wire bonding process and/or a flip chip bonding process.
Abstract:
PURPOSE: An infrared sensor chip, an infrared sensor, and an operating method and testing method thereof are provided to reduce costs for manufacturing the infrared sensor and developing the same and to improve a yield for monitoring a process. CONSTITUTION: An infrared sensor chip comprises a CMOS(Complementary Metal-Oxide Semiconductor) circuit board(110) and a bolometer(120). The CMOS circuit board is composed of an active matrix(111), a low line selecting unit, and an output multiplexer unit. The bolometer is laminated on the CMOS circuit board and composed of an active cell and a reference cell. The low line selecting unit selects a cell among the cells of the bolometer for a parametric test with respect to the bolometer of a wafer or a chip state. A voltage is applied to the selected cell. The output multiplexer unit output current properties according to the application of the voltage. [Reference numerals] (111,BB) Active matrix + SA + ADC; (120,AA) Infrared sensor; (200) Sa-FPA controller(SA/ADC/SP controller); (CC) ISP/Controller; (DD) Infrared sensor in prior art; (EE) Infrared sensor in the present invention
Abstract:
PURPOSE: An infrared sensor using a Sa-FPA(Semi-Active Focal Plane Array) and a method for manufacturing the same are provided to inspect an operation state of the sensor in advance and to enhance chip density. CONSTITUTION: An infrared sensor using a Sa-FPA comprises a switching unit(310), a wiring routing unit(320), an ROIC(Readout Integrate Circuits) connection pad unit(330), an infrared sensor(400), an address control logic unit(300), and an ROIC chip. The switching unit is formed on a circuit substrate in advance. The wiring routing unit is formed on the circuit substrate in advance and routes electrical signals by being connected to the switching unit. The ROIC connection pad unit is formed on the circuit substrate and connected to the wiring routing unit. The infrared sensor is connected to the switching unit formed in advance by using a monolithic method. The address control logic unit is formed on the circuit substrate in advance and controls the switching unit and the wiring routing unit so that the infrared sensor generates electrical signals by sensing the infrared rays. The ROIC chip is independently manufactured and comprises a sensor chip connection pad unit being connected to the ROIC connection pad, thereby reading the electrical signals generated by the infrared sensor. [Reference numerals] (300) Address control logic unit; (310) Switching unit; (320) Wiring routing unit; (330) ROIC connection pad unit; (400) Infrared sensor
Abstract:
PURPOSE: A pixel design for enhancing a fill factor of a microbolometer is provided to enhance the structural stability of a microbolometer because four pixels share a single anchor and to improve productivity because a size of a chip having the microbolometer is reduced. CONSTITUTION: A pixel design for enhancing a fill factor of a microbolometer comprises a bolometer array. The bolometer array is composed of an arrangement of bolometer pixels. The bolometer pixel comprises a lower layer, a collaboration(130), an upper layer, an insulating layer, and an anchor(160). The lower layer comprises a reflective metal layer(120) of the upper part of a substrate(110). The collaboration is arranged in the upper part of the lower layer. The upper layer comprises a bolometer layer(140) of the upper part of the collaboration and a penetration metal layer(150). The insulating layer insulates the lower layer and upper layer. The anchor supports the upper layer.
Abstract:
본 발명의 일실시예에 따른 마이크로 볼로미터에서 필 팩터를 높이기 위한 픽셀 디자인은, 기판 상부의 반사 금속층을 포함하는 하부층; 상기 하부층 상부의 공동; 상기 공동 상부의 볼로미터층과 그 위의 투과 금속층을 포함하는 상부층; 상기 하부층 및 상기 상부층의 절연을 위한 절연층; 및 상기 상부층을 지지하는 앵커를 포함하는 각 볼로미터 픽셀들의 배열로 이루어진 볼로미터 어레이에 있어서, 상기 볼로미터 픽셀 네 개가 상기 앵커 하나를 공유하는 것을 특징으로 한다.
Abstract:
실시예에 따르면, 액티브 매트릭스, 로우 라인 선택부 및 출력 멀티플렉서부로 구성된 CMOS회로 기판; 및 상기 CMOS 회로 기판 상에 적층되며, 액티브 셀과 레퍼런스 셀로 구성되는 볼로미터를 포함하고, 웨이퍼 또는 칩 상태에서의 상기 볼로미터에 대한 동작, 최종 및 파라메트릭 테스트를 위해, 상기 로우 라인 선택부는 상기 볼로미터 중 전압 인가의 대상이 되는 셀을 선택하고, 상기 출력 멀티플렉서부는 상기 전압 인가에 따른 전류 특성을 출력하는 적외선 센서칩이 제공된다.